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| Real-time detection of cardiac troponin I and mechanism analysis of AlGaAs/GaAs high electron mobility transistor biosensor 期刊论文
AIP ADVANCES, 2020, 卷号: 10, 期号: 11, 页码: 115205
作者: Jiaming Luo; Sufang Li; Mengke Xu; Min Guan; Mengxi Yang; Jingyi Ren; Yang Zhang; Yiping Zeng
  收藏 | 浏览/下载：9/0 | 提交时间：2021/05/21 |
| Hybrid-gate structure designed for high-performance normally-off p-GaN high-electron-mobility transistor 期刊论文
Japanese Journal of Applied Physics, 2020, 卷号: 59, 期号: 11, 页码: 111001
作者: Di Niu; Quan Wang; Wei Li; Changxi Chen; Jiankai Xu; Lijuan Jiang; Chun Feng; Hongling Xiao; Qian Wang; Xiangang Xu; Xiaoliang Wang
收藏 | 浏览/下载：9/0 | 提交时间：2021/05/24 |
| Effect of C-doped GaN film thickness on the structural and electrical properties of AlGaN/ GaN-based high electron mobility transistors 期刊论文
Semiconductor Science and Technology, 2019, 卷号: 34, 期号: 12, 页码: 125006
作者: Weizhen Yao; Lianshan Wang; Fangzheng Li; Yulin Meng; Shaoyan Yang ; Zhanguo Wang
收藏 | 浏览/下载：7/0 | 提交时间：2020/07/30 |
| Effect of growth temperature of GaAs Sb 1− metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 11, 页码: 118102
作者: Jing Zhang; Hong-Liang Lv; Hai-Qiao Ni; Shi-Zheng Yang; Xiao-Ran Cui; Zhi-Chuan Niu; Yi-Men Zhang and Yu-Ming Zhang
收藏 | 浏览/下载：22/0 | 提交时间：2020/07/30 |
| Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 2, 页码: 028101
作者: Jing Zhang ; Hongliang Lv ; Haiqiao Ni ; Shizheng Yang ; Xiaoran Cui ; Zhichuan Niu ; Yimen Zhang ; Yuming Zhang
收藏 | 浏览/下载：22/0 | 提交时间：2020/07/30 |
| Investigation of surface traps-induced current collapse phenomenon in AlGaN/ GaN high electron mobility transistors with schottky gate structures 期刊论文
Journal of Physics D: Applied Physics, 2018, 卷号: 51, 期号: 34, 页码: 345102
作者: Huang Huolin; Sun Zhonghao; Cao Yaqing; Li Feiyu; Zhang Feng; Wen Zhengxin; Zhang Zifeng; Liang Yung C.; Hu Lizhong
收藏 | 浏览/下载：19/0 | 提交时间：2019/11/15 |
| Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer 期刊论文
NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2018, 卷号: 10, 期号: 2, 页码: 185-189
作者: Meilan Hao ; Quan Wang ; Lijuan Jiang ; Chun Feng ; Changxi Chen ; Cuimei Wang ; Hongling Xiao ; Fengqi Liu ; Xiangang Xu ; Xiaoliang Wang ; Zhanguo Wang
收藏 | 浏览/下载：34/0 | 提交时间：2019/11/15 |
| Electron mobility of inverted InAs/GaSb quantum well structure 期刊论文
Solid State Communications, 2017, 卷号: 267, 页码: 29-32
作者: Wenjun Huang; Wenquan Ma; Jianliang Huang; Yanhua Zhang; Yulian Cao
收藏 | 浏览/下载：26/0 | 提交时间：2018/05/23 |
| The Comparison of Current Ratio ION/IOFF and Mobility Between SiGe Substrate and GaAs Substrate In₀.₂₃Ga₀.₇₇As Channel MOSFETs 期刊论文
IEEE Transactions on Electron Devices, 2016, 卷号: 63, 期号: 8, 页码: 3084-3087
Xiangting Kong; Renrong Liang; Xuliang Zhou; Shiyan Li; Mengqi Wang; Honggang Liu; Jing Wang; Wei Wang; Jiaoqing Pan
收藏 | 浏览/下载：31/0 | 提交时间：2017/03/10 |
| GaN high electron mobility transistors with AlInN back barriers 期刊论文
journal of alloys and compounds, 2016, 卷号: 662, 页码: 16-19
X.G. He; D.G. Zhao; D.S. Jiang; J.J. Zhu; P. Chen; Z.S. Liu; L.C. Le; J. Yang; X.J. Li; J.P. Liu; L.Q. Zhang; H. Yang
收藏 | 浏览/下载：13/0 | 提交时间：2017/03/10 |
