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| Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition 期刊论文 journal of alloys and compounds, 2011, 卷号: 509, 期号: 3, 页码: 748-750 作者: Yang H; Jiang DS; Le LC; Zhang SM; Wu LL 收藏  |  浏览/下载:46/3  |  提交时间:2011/07/05
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| An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells 期刊论文 journal of alloys and compounds, 2010, 卷号: 489, 期号: 2, 页码: 461-464 作者: Wang YT; Zhao DG; Zhang SM; Yang H; Jiang DS 收藏  |  浏览/下载:146/11  |  提交时间:2010/04/04
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| Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions 期刊论文 半导体学报, 2009, 卷号: 30, 期号: 8, 页码: 47-51 Chen Xiaofeng; Chen Nuofu; Wu Jinliang; Zhang Xiulan; Chai Chunlin; Yu Yude 收藏  |  浏览/下载:19/0  |  提交时间:2010/11/23 |
| InN nanoflowers grown by metal organic chemical vapor deposition 期刊论文 applied physics letters, 2006, 卷号: 89, 期号: 7, 页码: art.no.071113 Kang TT (Kang Ting-Ting); Liu X (Liu Xianglin); Zhang RQ (Zhang Ri Q.); Hu WG (Hu Wei G.); Cong G (Cong Guangwei); Zhao FA (Zhao Feng-Ai); Zhu Q (Zhu Qinsheng) 收藏  |  浏览/下载:36/0  |  提交时间:2010/04/11
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| High-performance quantum-dot superluminescent diodes 期刊论文 ieee photonics technology letters, 2004, 卷号: 16, 期号: 1, 页码: 27-29 作者: Xu B; Jin P 收藏  |  浏览/下载:68/29  |  提交时间:2010/03/09
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| Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth 会议论文 iumrs/icem 2002 conference, xian, peoples r china, jun 10-14, 2002 Zhang ZC; Ren BY; Chen YH; Yang SY; Wang ZG 收藏  |  浏览/下载:25/0  |  提交时间:2010/11/15
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| Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth 期刊论文 microelectronic engineering, 2003, 卷号: 66, 期号: 1-4, 页码: 504-509 Zhang ZC; Ren BY; Chen YH; Yang SY; Wang ZG 收藏  |  浏览/下载:41/0  |  提交时间:2010/08/12
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| Excitonic photoluminescence properties of nanocrystalline GaSb and Ga0.62In0.38Sb embedded in silica films 期刊论文 journal of luminescence, 2002, 卷号: 99, 期号: 3, 页码: 273-281 Liu FM; Wang TM; Zhang LD; Li GH; Han HX 收藏  |  浏览/下载:55/0  |  提交时间:2010/08/12
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| Numerical analysis of LEC growth of GaAs with an axial magnetic field 期刊论文 international journal of heat and mass transfer, 2002, 卷号: 45, 期号: 13, 页码: 2843-2851 Li MW; Hu WR; Chen NH; Zeng DL; Tang ZM 收藏  |  浏览/下载:53/0  |  提交时间:2010/08/12
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| Space-grown SI-GaAs and its application 会议论文 12th international semicoducting and insulating materials conference (simc-xii2002), smolenice, slovakia, jun 30-jul 05, 2002 Chen NF; Zhong XG; Zhang M; Lin LY 收藏  |  浏览/下载:14/0  |  提交时间:2010/10/29
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