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Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure 期刊论文
journal of non-crystalline solids, 2011, 卷号: 357, 期号: 1, 页码: 121-125
作者:  Wang C
收藏  |  浏览/下载：69/3  |  提交时间：2011/07/05
Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311
作者:  Xu B;  Zhou GY;  Ye XL;  Zhang HY
收藏  |  浏览/下载：53/5  |  提交时间：2011/07/05
Formation trends of ordered self-assembled nanoislands on stepped substrates 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073512
Liang S (Liang S.); Zhu HL (Zhu H. L.); Kong DH (Kong D. H.); Wang W (Wang W.)
收藏  |  浏览/下载：12/0  |  提交时间：2010/11/14
PHASE TRANSITION OF VANADIUM OXIDE FILMS ANNEALED WITH DIFFERENT METHODS 期刊论文
journal of infrared and millimeter waves, 2010, 卷号: 29, 期号: 6, 页码: 457-460
作者:  Li GK
收藏  |  浏览/下载：47/3  |  提交时间：2011/07/05
Dielectric relaxation and giant dielectric constant of nb-doped cacu(3)ti(4)o(12) ceramics under dc bias voltage 期刊论文
Physica status solidi a-applications and materials science, 2009, 卷号: 206, 期号: 3, 页码: 562-566
作者:  Liu, Peng;  He, Ying;  Zhou, Jian-ping;  Mu, Chun-hong;  Zhang, Huai-wu
收藏  |  浏览/下载：27/0  |  提交时间：2019/05/12
Dielectric relaxation and giant dielectric constant of Nb-doped CaCu3Ti4O12 ceramics under dc bias voltage 期刊论文
physica status solidi a-applications and materials science, 2009, 卷号: 206, 期号: 3, 页码: 562-566
Liu P; He Y; Zhou JP; Mu CH; Zhang HW
收藏  |  浏览/下载：156/21  |  提交时间：2010/03/08
Size distributions of quantum islands on stepped substrates 期刊论文
journal of chemical physics, 2009, 卷号: 131, 期号: 15, 页码: art.no.154704
Liang S (Liang, S.); Zhu HL (Zhu, H. L.); Wang W (Wang, W.)
收藏  |  浏览/下载：304/92  |  提交时间：2010/03/08
Controlling electronic structures by irradiation in single-walled SiC nanotubes: a first-principles molecular dynamics study 期刊论文
nanotechnology, 2009, 卷号: 20, 期号: 7, 页码: art. no. 075708
作者:  Li JB
收藏  |  浏览/下载：164/21  |  提交时间：2010/03/08
Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition 期刊论文
journal of physics d-applied physics, 2009, 卷号: 42, 期号: 14, 页码: art. no. 145410
作者:  Zhang SM;  Yang H;  Yang H;  Wang YT;  Zhu JJ
收藏  |  浏览/下载：72/0  |  提交时间：2010/03/08
The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD 期刊论文
semiconductor science and technology, 2009, 卷号: 24, 期号: 5, 页码: art. no. 055001
作者:  Yang H;  Jiang DS;  Zhao DG;  Zhang SM;  Yang H
收藏  |  浏览/下载：88/41  |  提交时间：2010/03/08

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