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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 专题：西安理工大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 New Dual-GCT Structure with CA-STA Combined Anode Regions 会议论文 2016 IEEE 8TH INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE (IPEMC-ECCE ASIA), 2016-01-01 作者:  Yang, Jing;  Wang, Cailin 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/20 Dual Gate Commutated Thyristor  Combined Anode  isolation  Characteristics   Analysis of Current Commutation Mechanism and Design Consideration of IGCT 会议论文 6th IEEE International Power Electronics and Motion Control Conference, Wuhan, PEOPLES R CHINA, 2009-01-01 作者:  Wang, Cailin;  Zhang, Ruliang;  Gao, Yong;  An, Tao 收藏  |  浏览/下载：1/0  |  提交时间：2019/12/25 power semiconductor devices  Intrgrated Gate Commutated Thyristor (IGCT)  gate turn-off thyristor (GTO)  current commutation mechanism  gate-cathode layout   A Quasi-2D Lumped Charge Model for IEC-GCT 会议论文 2009 IEEE 6TH INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE, VOLS 1-4, 2009-01-01 作者:  Zhang Ruliang;  Gao Yong;  Wang Cailin;  Yang Yuan 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/25 gate commutated thyristor  lumped charge modeling  physics-based model  quasi two-dimension   Analysis of GCT Temperature Characteristics 会议论文 2009 IEEE 6TH INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE, VOLS 1-4, 2009-01-01 作者:  Zhang Ruliang;  Gao Yong;  Wang Cailin;  An Tao 收藏  |  浏览/下载：1/0  |  提交时间：2019/12/25 gate commutated thyristor  power semiconductor  safe operating area  temperature performance   A New Trench-Planner Gate MOSFET Structure 会议论文 2009 IEEE 6TH INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE, VOLS 1-4, 2009-01-01 作者:  Wang, Cailin;  Sun, Cheng;  Han, Junya 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/25 power semicondctor devices  power MOSFET  planar-trench gate  etching   Characteristics analysis of transparent anode GTO 会议论文 4th International Power Electronics and Motion Control Conference (IPEMC 2004), Xian Jiaotong Univ, Xian, PEOPLES R CHINA, 2004-08-14 作者:  Wang, CL;  Gao, Y;  An, T;  Ma, L 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/25 power semiconductor devices  gate turn-off thyristor (GTO)  short anode gate-off thyristor (SAGTO)  transparent anode gate-off thyristor (TAGTO)  gate commuted thyristor (GCT)  injection efficiency  transparent anode  simulation   Design concept for 2800V/2000A GCT 会议论文 4th International Power Electronics and Motion Control Conference (IPEMC 2004), Xian Jiaotong Univ, Xian, PEOPLES R CHINA, 2004-08-14 作者:  Wang, CL;  Gao, Y;  An, T 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/25 pmver semiconductor devices  Gate Commutated Thyristor (GCT)  Gare Turn-Off thyristor (GTO)  transparent anode  buffer layer  separation region  simulation