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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 专题：山东大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 A Mixed-finite Volume Element Coupled with the Method of Characteristic Fractional Step Difference for Simulating Transient Behavior of Semiconductor Device of Heat Conductor And Its Numerical Analysis 期刊论文 应用数学学报（英文版）, 2017, 卷号: 33, 期号: 4, 页码: 1053-1072 作者:  Yuan Yirang;  Yang Qing;  Li Changfeng;  Sun Tongjun 收藏  |  浏览/下载：10/0  |  提交时间：2019/12/11 transient behavior of three-dimensional semiconductor device  numerical simulation  mixed finite volume element  modified characteristic fractional step difference  second order estimate in L2 norm   A Mixed-finite Volume Element Coupled with the Method of Characteristic Fractional Step Difference for Simulating Transient Behavior of Semiconductor Device of Heat Conductor And Its Numerical Analysis 期刊论文 Acta Mathematicae Applicatae Sinica, 2017, 期号: 04, 页码: 1053-1072 作者:  Yi-rang YUAN;  Qing YANG;  Chang-feng LI;  Tong-jun SUN 收藏  |  浏览/下载：12/0  |  提交时间：2019/12/12 transient behavior of three-dimensional semiconductor device  numerical simulation  mixed finite volume element  modified characteristic fractional step difference  second order estimate in L~2 norm   Analytical model of Energy Level Alignment at Metal-Organic Interface facilitating Hole Injection 会议论文 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), SEP 07-09, 2017 作者:  Shi, Xuewen;  Xu, Guangwei;  Duan, Xinlv;  Lu, Nianduan;  Chen, Jiezhi 收藏  |  浏览/下载：1/0  |  提交时间：2019/12/31 Metal-organic interface  Energy level alignment  Exponential density of  states  Electrostatic model   Analytical model of energy level alignment at metal-organic interface facilitating hole injection 会议论文 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017, 7 September 2017 through 9 September 2017 作者:  Shi, Xuewen;  Xu, Guangwei;  Duan, Xinlv;  Lu, Nianduan;  Chen, Jiezhi 收藏  |  浏览/下载：1/0  |  提交时间：2019/12/31 Electrostatic model  Energy level alignment  Exponential density of states  Metal-organic interface   Analysis on block-centered finite differences of numerical simulation of semiconductor device detector 期刊论文 APPLIED MATHEMATICS AND COMPUTATION, 2016, 卷号: 279, 页码: 1-15 作者:  Yuan, Yirang;  Liu, Yunxin;  Li, Changfeng;  Sun, Tongjun;  Ma, Liqin 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/16 Three-dimensional photoconduction detector  Porous flow model  Block-centered differences on nonuniform partition  Super-convergent  numerical analysis  Numerical simulation   Error analysis of the semi-discrete local discontinuous Galerkin method for semiconductor device simulation models 期刊论文 Science China Mathematics, 2011, 卷号: 53, 期号: 12, 页码: 3255-3278 作者:  Liu Y.X.;  Shu C.-W. 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/23 Error estimate  Local discontinuous Galerkin method  Semiconductor   Error analysis of the semi-discrete local discontinuous Galerkin method for semiconductor device simulation models 期刊论文 中国科学：数学（英文版）, 2010, 卷号: 53, 期号: 12, 页码: 3255-3278 作者:  Liu YunXian;  Shu Chi-Wang 收藏  |  浏览/下载：7/0  |  提交时间：2019/12/26 local discontinuous Galerkin method  error estimate  semiconductor