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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 专题：山东大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Phase field modelling on the growth dynamics of double voids of different sizes during czochralski silicon crystal growth 期刊论文 3RD INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS RESEARCH AND APPLICATIONS (AMRA 2016), 2017, 卷号: 170, 期号: 1 作者:  Guan, X. J.;  Wang, J. 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/16 Simulation of V/G during Φ450 mm Czochralski Grown Silicon Single Crystal Growth under the Different Crystal and Crucible Rotation Rates 期刊论文 MATEC Web of Conferences, 2016, 卷号: 67 作者:  Guan X.J.;  Zhang X.Y. 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/16 Simulation of V/G During Φ450 mm Czochralski Grown Silicon Single Crystal Growth Under the Different Crystal and Crucible Rotation Rates 会议论文 作者:  X J GUAN;  X Y ZHANG 收藏  |  浏览/下载：1/0  |  提交时间：2019/12/31 Simulation of V/G During  mm Czochralski Grown Silicon Single Crystal Growth Under the Different Crystal and Crucible Rotation Rates   Simulation of V/G during Φ450 mm Czochralski Grown Silicon Single Crystal Growth under the Different Crystal and Crucible Rotation Rates 会议论文 International Symposium on Materials Application and Engineering, SMAE 2016, August 20, 2016 - August 21, 2016 作者:  Guan, X.J.;  Zhang, X.Y. 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/31 Simulation of V/G During phi 450 mm Czochralski Grown Silicon Single Crystal Growth Under the Different Crystal and Crucible Rotation Rates 会议论文 International Symposium on Materials Application and Engineering (SMAE), AUG 20-21, 2016 作者:  Guan, X. J.;  Zhang, X. Y. 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/31 Phase Field Modeling of the Effects of Gradient Energy Coefficients on the Void-matrix Interface Thickness during Czochralski Silicon Crystal 会议论文 6th International Conference on Manufacturing Science and Engineering (ICMSE), NOV 28-29, 2015 作者:  Guan, X. J.;  Wang, J. 收藏  |  浏览/下载：1/0  |  提交时间：2019/12/31 Silicon crystal  Czochralski process  Phase field modeling  Gradient  energy coefficient  Void-matrix interface thickness   Simulation of Melt Flow and Interface Shape of 450 mm Czochralski Grown Silicon Single Crystal 会议论文 International Conference on Materials Science and Energy Engineering (CMSEE), DEC 12-14, 2014 作者:  Zhang, X. Y.;  Guan, X. J.;  Wang, J. 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/31 Numerical Simulation  450 mm  Crystal Rotation  Crucible Rotation  Vortex  Interface Deflection   Growth dynamics of single void during Czochralski silicon crystal growth using phase-field modeling 会议论文 2nd International Conference on Materials Engineering, ICMEN 2014, 17 May 2014 through 18 May 2014 作者:  Wang, Jin;  Guan, Xiao Jun;  Zhang, Xiang Yu;  Zeng, Qing Kai 收藏  |  浏览/下载：9/0  |  提交时间：2019/12/31 Czochralski process  Growth dynamics  Phase-field model  Silicon crystal  Single void