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Anisotropic optical phonons in MOCVD grown Si-doped GaN/Sapphire epilayers 期刊论文
Materials Science and Engineering B-Advanced Functional Solid-State Materials, 2020, 卷号: 260, 页码: 10
作者:  D. N. Talwar, H. H. Lin and Z. C. Feng
收藏  |  浏览/下载:3/0  |  提交时间:2021/07/06
Raman spectra and phonon modes of MgxZn1-xO alloy films (EI CONFERENCE) 会议论文
12th International Conference on II-VI Compounds, September 12, 2005 - September 16, 2005, Warsaw, Poland
Wei Z. P.; Lu Y. M.; Shen D. Z.; Zhang Z. Z.; Wu C. X.; Zhang J. Y.; Yao B.; Fan X. W.
收藏  |  浏览/下载:13/0  |  提交时间:2013/03/25
Hexagonal MgxZn1-xO alloy layers with 0 &le 0.3 have been grown by plasma-assisted molecular beam epitaxy on sapphire (006) and Si (111) substrates. Their crystal structures are characterized by x-ray diffraction spectroscopy. The nonresonant and resonant Raman spectra were measured using 488 nm line from Ar+ laser  and 325 nm line from He-Cd laser by backscattering geometry. Four Raman modes (E2 high  LO  TO  multiphonon processes) were observed in the nonresonant Raman spectra of hexagonal MgxZn1-xO with different Mg contents. The optical phonon frequencies were found to display one-mode behaviour for all the samples since no separate ZnO- and MgO-like modes were observed. The long-wavelength frequencies of ZnO-like optical phonons measured in the resonant Raman spectra can be expressed as linear functions of x. These behaviours can be explained within a modified random-element-isodisplacement model (MREI). 2006 WILEY-VCH Verlag GmbH Co. KGaA.  


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