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浏览/检索结果: 共3条，第1-3条 帮助 限定条件 专题：兰州大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Surface morphology and roughness of Cu thin films prepared by ionized cluster beam deposition 会议论文 2012 International Conference on Frontiers of Advanced Materials and Engineering Technology, FAMET 2012, Xiamen, China, January 4, 2012 - January 5, 2012 作者:  Cao, Bo;  Yang, Tongrui;  Li, Gongping;  Cho, Seong Jin;  Kim, Hee 收藏  |  浏览/下载：2/0  |  提交时间：2017/01/20 Surface morphology  Atomic force microscopy  Chemical modification  Copper  Deposition  Engineering technology  Ionization  Ions  Morphology  Semiconducting silicon compounds  Surface roughness  Surfaces  Thin films  Vapor deposition  Acceleration voltages  Average grain size  Cu Films  Cu thin film  Deposition conditions  Ionized cluster beam deposition  Ionized cluster beams  P-type Si   Controlled growth and supercapacitive behaviors of CVD carbon nanotube arrays 会议论文 11th IUMRS International Conference in Asia, IUMRS-ICA2010, Qingdao, China, September 25, 2010 - September 28, 2010 作者:  Zhao, Dandan;  Yang, Zhi;  Wei, Hao;  Zhang, Yafei 收藏  |  浏览/下载：4/0  |  提交时间：2017/01/20 Chemical vapor deposition  Amorphous carbon  Amorphous silicon  Capacitors  Carbon nanotubes  Catalysts  Electric current collectors  Electrodes  Graphene  Metallic compounds  Secondary batteries  Semiconducting silicon compounds  Silicon wafers  Sodium  Titanium compounds  Active material  Ambient gas  Carbon nanotube array  Catalyst film  Catalyst particles  Chemical vapor  Controlled growth  Current collector  Electrodeposition technique  Graphene layers  Growth conditions  Growth time  Local environments  Low cost approach  Ni foam  Scan rates  Super capacitor  Supercapacitive behavior  Transitional metal oxide  Vertically aligned CNT arrays   退火气氛对铝诱导a-Si薄膜结晶过程的影响 期刊论文 半导体学报/Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2008, 卷号: 29, 期号: 8, 页码: 1544-1547 作者:  王成龙;  范多旺;  孙硕;  张福甲 收藏  |  浏览/下载：3/0  |  提交时间：2015/04/27 a-Si薄膜  退火  晶化  AIC  a-Si film  AIC  Amorphous silicon films  Annealing atmospheres  Annealing temperatures  Annealing times  Crystallinity  Dc magnetron sputtering  Experimental studies  Glass substrates  High-temperature  Induced crystallizations  Overflow rates  Scanning electrons  Si films  Weak bondings  X-ray diffractions