CORC

浏览/检索结果: 共137条,第1-10条 帮助

限定条件                
已选(0)清除 条数/页:   排序方式:
Vortex pinning properties in co-doped bafe2as2 thin films with a high critical current density over 2 ma cm?2 at 9 t 期刊论文
Superconductor science and technology, 2016, 卷号: 30, 期号: 2
作者:  Yuan,Pusheng;  Xu,Zhongtang;  Wang,Dongliang;  Zhang,Ming;  Li,Jianqi
收藏  |  浏览/下载:29/0  |  提交时间:2019/05/09
Influence of defects in SiC (0001) on epitaxial graphene 期刊论文
CHINESE PHYSICS B, 2014, 卷号: 23, 期号: 8
Guo, Y; Guo, LW; Lu, W; Huang, J; Jia, YP; Sun, W; Li, ZL; Wang, YF
收藏  |  浏览/下载:23/0  |  提交时间:2015/04/14
Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 105, 期号: 7
Du, CH; Ma, ZG; Zhou, JM; Lu, TP; Jiang, Y; Zuo, P; Jia, HQ; Chen, H
收藏  |  浏览/下载:26/0  |  提交时间:2015/04/14
The correlation of epitaxial graphene properties and morphology of SiC (0001) 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 115, 期号: 4
Guo, Y; Guo, LW; Huang, J; Yang, R; Jia, YP; Lin, JJ; Lu, W; Li, ZL; Chen, XL
收藏  |  浏览/下载:22/0  |  提交时间:2015/04/14
Epitaxial growth of large-area bilayer graphene on Ru(0001) 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 104, 期号: 9
Que, YD; Xiao, WD; Fei, XM; Chen, H; Huang, L; Du, SX; Gao, HJ
收藏  |  浏览/下载:17/0  |  提交时间:2015/04/14
Step flow and polytype transformation in growth of 4H-SiC crystals 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 394, 页码: 126
Liu, CJ; Chen, XL; Peng, TH; Wang, B; Wang, WJ; Wang, G
收藏  |  浏览/下载:223/0  |  提交时间:2015/04/14
Characterizations and formation mechanism of a new type of defect related to nitrogen doping in SiC crystals 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2014, 卷号: 117, 期号: 3, 页码: 1563
Wang, B; Peng, TH; Liang, JK; Wang, G; Wang, WJ; Zhao, HZ; Chen, XL
收藏  |  浏览/下载:10/0  |  提交时间:2015/04/14
Raman Spectrum of Epitaxial Graphene Grown on Ion Beam Illuminated 6H-SiC (0001) 期刊论文
CHINESE PHYSICS LETTERS, 2014, 卷号: 31, 期号: 11
Zhou, Z; Hu, Y; Shan, XY; Lu, XH
收藏  |  浏览/下载:19/0  |  提交时间:2015/04/14
In situ Raman spectroscopy of LiFePO4: size and morphology dependence during charge and self-discharge 期刊论文
NANOTECHNOLOGY, 2013, 卷号: 24, 期号: 42
Wu, J; Dathar, GKP; Sun, CW; Theivanayagam, MG; Applestone, D; Dylla, AG; Manthiram, A; Henkelman, G; Goodenough, JB; Stevenson, KJ
收藏  |  浏览/下载:26/0  |  提交时间:2014/01/16
Influence of Si doping on the structural and optical properties of InGaN epilayers 期刊论文
CHINESE PHYSICS B, 2013, 卷号: 22, 期号: 10
Lu, PY; Ma, ZG; Su, SC; Zhang, L; Chen, H; Jia, HQ; Jiang, Y; Qian, WN; Wang, G; Lu, TP; He, M
收藏  |  浏览/下载:22/0  |  提交时间:2014/01/16


©版权所有 ©2017 CSpace - Powered by CSpace