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Material Growth and Device Fabrication of GaAs Based 1.3μm GaInNAs Quantum Well Laser Diodes 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 9, 页码: 1860-1864
作者:  Xu Yingqiang;  Yang Xiaohong;  Xu Yingqiang;  Han Qin;  Niu Zhichuan
收藏  |  浏览/下载:33/0  |  提交时间:2010/11/23
High-temperature characteristics of gainnas/gaas single-quantum-well lasers grown by plasma-assisted molecular beam epitaxy 期刊论文
Chinese physics letters, 2001, 卷号: 18, 期号: 5, 页码: 659-661
作者:  Pan, Z;  Li, LH;  Du, Y;  Lin, YW;  Wu, RH
收藏  |  浏览/下载:19/0  |  提交时间:2019/05/12
High-temperature characteristics of GaInNAs/GaAs single-quantum-well lasers grown by plasma-assisted molecular beam epitaxy 期刊论文
chinese physics letters, 2001, 卷号: 18, 期号: 5, 页码: 659-661
Pan Z; Li LH; Du Y; Lin YW; Wu RH
收藏  |  浏览/下载:69/4  |  提交时间:2010/08/12


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