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Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications 外文期刊
2010
作者:  Liu, Q;  Wang, Y;  Liu, M;  Yang, JH;  Zuo, QY
收藏  |  浏览/下载:7/0  |  提交时间:2010/11/26
Rram  
Preparation and Characteristics of Nanoscale Diamond-Like Carbon Films for Resistive Memory Applications 外文期刊
2010
作者:  Fu D, Xie D, Zhang CH, et al.
收藏  |  浏览/下载:9/0  |  提交时间:2010/11/26
Resistive Switching Properties of Au/ZrO2/Ag Structure for Low-Voltage Nonvolatile Memory Applications 外文期刊
2010
作者:  Liu, M;  Liu, S;  Liu, Q;  Zhang, MH;  Long, SB
收藏  |  浏览/下载:9/0  |  提交时间:2010/11/26
Zro2  
Self-rectifying effect in gold nanocrystal-embedded zirconium oxide resistive memory 外文期刊
2009
作者:  Liu, M;  Li, YT;  Zhang, S;  Liu, Q;  Long, SB
收藏  |  浏览/下载:10/0  |  提交时间:2010/11/26
Resistive switching characteristics of MnOx-based ReRAM 外文期刊
2009
作者:  Liu, M;  Zhang, S;  Guan, WH;  Liu, Q;  Wang, Q
收藏  |  浏览/下载:5/0  |  提交时间:2010/11/26
Organic nonpolar nonvolatile resistive switching in poly(3,4-ethylene-dioxythiophene): Polystyrenesulfonate thin film 外文期刊
2009
作者:  Ji, ZY;  Liu, XH;  Tu, DY;  Shang, LW;  Liu, J
收藏  |  浏览/下载:14/0  |  提交时间:2010/11/26
Multilevel resistive switching with ionic and metallic filaments 外文期刊
2009
作者:  Liu, M;  Abid, Z;  Wang, W;  Liu, Q;  Guan, WH
收藏  |  浏览/下载:8/0  |  提交时间:2010/11/26
Improvement of Resistive Switching Properties in ZrO2-Based ReRAM With Implanted Ti Ions 外文期刊
2009
作者:  Zuo, QY;  Liu, Q;  Long, SB;  Wang, W;  Zhang, S
收藏  |  浏览/下载:9/0  |  提交时间:2010/11/26
Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application 外文期刊
2009
作者:  Yang, YC;  Pan, F;  Liu, Q;  Liu, M;  Zeng, F
收藏  |  浏览/下载:7/0  |  提交时间:2010/11/26
Nonpolar nonvolatile resistive switching in Cu doped ZrO2 外文期刊
2008
作者:  Guan, WH;  Long, SB;  Liu, Q;  Liu, M;  Wang, W
收藏  |  浏览/下载:8/0  |  提交时间:2010/11/26


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