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Comparison of 10 Mev Electron Beam Irradiation Effect on InGaN/GaN and AlGaN/GaN Multiple Quantum Well
会议论文
作者:
Bo Mei
;
Wang L(王磊)
;
Qingxuan Li
;
Ningyang Liu
;
Ligang Song
收藏
  |  
浏览/下载:50/0
  |  
提交时间:2019/05/10
On-chip quantum state generation by means of integrated frequency combs
会议论文
San Juan, Puerto rico, 2017-07-10
作者:
Sciara, Stefania
;
Kues, Michael
;
Reimer, Christian
;
Roztocki, Piotr
;
Wetzel, Benjamin
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  |  
浏览/下载:27/0
  |  
提交时间:2017/12/29
simulation of ingan/gan light-emitting diodes with a non-local quantum well transport model
会议论文
12th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2012, Shanghai, China, August 28, 2012 - August 31, 2012
Xia Chang Sheng
;
Simon Li Z.M.
;
Sheng Yang
;
Cheng Li Wen
;
Da Hu Wei
;
Lu Wei
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  |  
浏览/下载:8/0
  |  
提交时间:2013/09/22
Computer simulation
Light emitting diodes
Models
Optoelectronic devices
simulation of ingan/gan light-emitting diodes with patterned sapphire substrate
会议论文
12th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2012, Shanghai, China, August 28, 2012 - August 31, 2012
Sheng Yang
;
Xia Chang Sheng
;
Simon Li Z.M.
;
Cheng Li Wen
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  |  
浏览/下载:10/0
  |  
提交时间:2013/09/22
Computer simulation
Efficiency
Extraction
Finite difference time domain method
Gallium nitride
Optoelectronic devices
Sapphire
Semiconductor quantum wells
Three dimensional computer graphics
Time domain analysis
InGaN multiple quantum well blue LED grown on patterned sapphire substrates
会议论文
2011 Symposium on Photonics and Optoelectronics, SOPO 2011, May 16, 2011 - May 18, 2011
作者:
Wang, Lianshan
;
Liu, Sheng
;
Feng, Zhechuan
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  |  
浏览/下载:3/0
  |  
提交时间:2019/12/31
Observation of photogalvanic current for interband absorption in InN films at room temperature
会议论文
2nd ieee international nanoelectronics conference, shanghai, peoples r china, mar 24-27, 2008
Tang, CG
;
Chen, YH
;
Liu, Y
;
Zhang, RQ
;
Liu, XL
;
Wang, ZG
;
Zhang, R
;
Zhang, Z
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  |  
浏览/下载:38/0
  |  
提交时间:2010/03/09
QUANTUM-WELLS
SPIN
Experimental investigation of slow light phenomenon in photonic crystal waveguide line defect laser
会议论文
international workshop on metamaterials, nanjing, peoples r china, nov 09-12, 2008
Xing MX
;
Ren G
;
Chen W
;
Zhou WJ
;
Wang HL
;
Chen LH
;
Zheng WH
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  |  
浏览/下载:39/0
  |  
提交时间:2010/03/09
MODE
Superluminescent diode monolithically integrated with novel Y-branch by bundle integrated waveguide for fiber optic gyroscope - art. no. 68380D
会议论文
2nd conference on optoelectronic devices and integration, beijing, peoples r china, nov 12-15, 2007
Wang, L
;
Zhao, LJ
;
Chen, WX
;
Pan, JQ
;
Zhou, F
;
Zhu, HL
;
Wang, W
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  |  
浏览/下载:42/0
  |  
提交时间:2010/03/09
photonic integrated circuit
Y-branch
superluminescent diode
bundle integrated guide
far field pattern
reactive ion etching
Design and performance of monolithic integrated electro-absorption modulated distributed feedback laser - art. no. 67820Y
会议论文
conference on optoelectronic materials and devices ii, wuhan, peoples r china, nov 02-05, 2007
作者:
Pan JQ
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  |  
浏览/下载:46/0
  |  
提交时间:2010/03/09
butt joint
Spontaneous emission and gain characteristics of InGaAs/InGaAsP quantum well laser (EI CONFERENCE)
会议论文
Optoelectronic Devices and Integration, November 8, 2004 - November 11, 2004, Beijing, China
Ning Y.
;
Sung Y.
;
Jin Z.
;
Wang L.
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  |  
浏览/下载:15/0
  |  
提交时间:2013/03/25
Long wavelength InGaAs/InGaAsP multiple quantum well laser is grown by MOCVD. The characteristics of spontaneous emission
amplified spontaneous emission and modal gain of the MQW is investigated by using single-pass multi-section technique. The amplified spontaneous emission is around a wavelength of 1500nm
dependent on the temperature and the current density. The modal gain spectra show a red shift with increasing temperature. The peak modal gain exhibits a decrease with increasing temperature from 140K to 300K. The loss measurements shows that the main loss mechanism in the structure might be the free carrier absorption in the doped cladding layers and a internal modal loss of about 10cm-1.
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