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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Impedance analysis study on the sensing process of BaTiO/sub 3/ based PTC ceramics in CO gas 会议论文 Key Engineering Materials, 3rd International Conference on High-Performance Ceramics (CICC-3), Shenzhen, China, INSPEC Zhi-Gang Zhou; Zi-Long Tang; Zhong-Tai Zhang 收藏  |  浏览/下载：5/0 Experimental study on the mechanism of BaTiO/sub 3/-based PTC-CO gas sensor 会议论文 Sensors and Actuators B (Chemical), Ninth International Meeting on Chemical Sensors. IMCS-9, Boston, MA, USA, INSPEC Zilong Tang; Zhigang Zhou; Zhongtai Zhang 收藏  |  浏览/下载：2/0 Theoretical study on energy levels and photophysical properties of p-n block oligomers 会议论文 JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 5th International Romanian Conference on Advanced Materials, Bucharest Magurele, ROMANIA, Web of Science Shan, Guangcun; Wan, Junhua; Yan, Binghai; Fan, Quli; Huang, Wei 收藏  |  浏览/下载：2/0 Nanostructure in the p-layer and its impacts on amorphous silicon solar cells 会议论文 21st international conference on amorphous and nanocrystalline semiconductors, lisbon, portugal, sep 04-09, 2005 Liao, XB (Liao, Xianbo); Du, WH (Du, Wenhui); Yang, XS (Yang, Xiesen); Povolny, H (Povolny, Henry); Xiang, XB (Xiang, Xianbi); Deng, XM (Deng, Xunming); Sun, K (Sun, Kai) 收藏  |  浏览/下载：267/77  |  提交时间：2010/03/29 amorphous semiconductors   Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers 会议论文 21st international conference on amorphous and nanocrystalline semiconductors, lisbon, portugal, sep 04-09, 2005 Xu Y (Xu Ying); Hu ZH (Hu Zhihua); Diao HW (Diao Hongwei); Cai Y (Cai Yi); Zhang SB (Zhang Shibin); Zeng XB (Zeng Xiangbo); Hao HY (Hao Huiying); Liao XB (Liao Xianbo); Fortunato E (Fortunato Elvira); Martins R (Martins Rodrigo) 收藏  |  浏览/下载：237/57  |  提交时间：2010/03/29 silicon   Hydrogen behavior in GaN epilayers grown by NH3-MBE 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Kong MY; Zhang JP; Wang XL; Sun DZ 收藏  |  浏览/下载：12/0  |  提交时间：2010/11/15 impurities  molecular beam epitaxy  nitrides  semiconducting III-V materials  GALLIUM NITRIDE  SAPPHIRE SUBSTRATE  DEFECTS  HETEROSTRUCTURE  SEMICONDUCTORS  STRESS   Optical transitions in GaNAs/GaAs single quantum well 会议论文 international workshop on nitride semiconductors (iwn 2000), nagoya, japan, sep 24-27, 2000 Luo XD; Xu ZY; Sun BQ; Pan Z; Li LH; Lin YW; Ge WK 收藏  |  浏览/下载：17/0  |  提交时间：2010/10/29 GaNAs  photoluminescence  band offset  band bowing coefficient  localized exciton  MOLECULAR-BEAM EPITAXY  ALLOYS  TEMPERATURE  GAASN