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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Power scaling and beam divergence compression of bottom-emitting vertical-cavity surface-emitting lasers 会议论文 5th International Symposium on Photoelectronic Detection and Imaging, ISPDI 2013, June 25, 2013 - June 27, 2013, Beijing, China 作者:  Zhang X.;  Qin L. 收藏  |  浏览/下载：22/0  |  提交时间：2014/05/15 High power Bragg reflection waveguide diode lasers with twin near-circular emission spots (EI CONFERENCE) 会议论文 2012 IEEE Photonics Society Summer Topical Meeting Series, PSST 2012, July 9, 2012 - July 11, 2012, Seattle, WA, United states Tong C.; Wang L.; Yang Y.; Zeng Y.; Wang L. 收藏  |  浏览/下载：17/0  |  提交时间：2013/03/25 A novel semiconductor laser with two symmetrical near-circular emission spots separated at an angle of 62 was demonstrated using Bragg reflection waveguide. The low beam divergence of 5.4 and power of 2.6 W were achieved. 2012 IEEE.   Beam combination using near-zero index metamaterials 会议论文 2010 IEEE 3rd International Nanoelectronics Conference (INEC 2010), 2010 作者:  Xingping Wang;  Yuanming Feng;  Sujuan Chen;  Zeyu Zhao;  Chongxi Zhou 收藏  |  浏览/下载：11/0  |  提交时间：2016/11/25 Large aperture low threshold current 980nmVCSELs fabricated with pulsed anodic oxidation (EI CONFERENCE) 会议论文 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China Jinjiang C.; Yongqiang N.; Te L.; Guangyu L.; Yan Z.; Biao P.; Yanfang S.; Lijun W. 收藏  |  浏览/下载：19/0  |  提交时间：2013/03/25 Pulsed anodic oxidation technique  a new way of forming current blocking layers  was successfully used in ridge-waveguide QW laser fabrication. We apply this method in 980nm VCSELs fabrication to form a high-quality native oxide current blocking layer  which simplify the device process. A significant reduction of threshold current and a distinguished device performance are achieved. The 500m-diameter device has a current threshold as low as 0.48W. The maximum CW operation output power at room temperature is 1.48W. The lateral divergence angle //and vertical divergence angle are as low as 15.3 and 13.8 without side-lobes at a current of 6A.   High efficiency, low vertical divergence angle 980nnn Al-free active region lasers with novel large optical cavity and asymmetrical cladding layers 会议论文 conference on in-plane semiconductor lasers iv, san jose, ca, jan 24-25, 2000 Xiu ZT; Zhang JM; Ma XY; Yang GW; Shen GD; Chen LH 收藏  |  浏览/下载：61/0  |  提交时间：2010/10/29 SQW LASERS  INGAASP  POWER  FIBER  NM