CORC

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Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer 会议论文
international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007
Zhao, YM; Sun, GS; Liu, XF; Li, JY; Zhao, WS; Wang, L; Li, JM; Zeng, YP
收藏  |  浏览/下载:54/0  |  提交时间:2010/03/09
Epitaxial growth of SiC on complex substrates 会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Sun GS; Li JM; Luo MC; Zhu SR; Wang L; Zhang FF; Lin LY
收藏  |  浏览/下载:15/0  |  提交时间:2010/11/15
High-quality GaN grown by gas-source MBE 会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Wang JX; Sun DZ; Wang XL; Li JM; Zeng YP; Hou X; Lin LY
收藏  |  浏览/下载:11/0  |  提交时间:2010/11/15
In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE 会议论文
10th international conference on metalorganic vapor phase epitaxy (icmovpe-x), sapporo, japan, jun 05-09, 2000
Lu DC; Wang CX; Yuan HR; Liu XL; Wang XH
收藏  |  浏览/下载:9/0  |  提交时间:2010/11/15
The growth and characterization of GaN grown on a gamma-Al2O3/(001) Si substrate by metalorganic vapor phase epitaxy 会议论文
2nd international symposium on blue laser and light emitting diodes (2nd isblled), chiba, japan, sep 29-oct 02, 1998
Wang LS; Liu XL; Zan YD; Wang D; Lu DC; Wang ZG
收藏  |  浏览/下载:13/0  |  提交时间:2010/10/29


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