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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z 会议论文 conference on ultrafast phenomena in semiconductors and nanostructure materials x, san jose, ca, jan 23-25, 2006 Sun, Z (Sun, Z.); Xu, ZY (Xu, Z. Y.); Yang, XD (Yang, X. D.); Sun, BQ (Sun, B. Q.); Ji, Y (Ji, Y.); Zhang, SY (Zhang, S. Y.); Ni, HQ (Ni, H. Q.); Niu, ZC (Niu, Z. C.) 收藏  |  浏览/下载：182/36  |  提交时间：2010/03/29 GaInNAs/GaAs quantum wells  optical properties  nonradiative recombination effect  time-resolved photoluminescence  PL decay dynamics  PL thermal quenching  MOLECULAR-BEAM EPITAXY  GAASN ALLOYS  EXCITATION   Optical study of localized and delocalized states in GaAsN/GaAs 会议论文 symposium on gan and related alloys held at the mrs fall meeting, boston, ma, dec 01-05, 2003 作者:  Tan PH 收藏  |  浏览/下载：17/0  |  提交时间：2010/10/29 MOLECULAR-BEAM EPITAXY  ALLOYS  GAAS1-XNX  PHOTOLUMINESCENCE  RELAXATION   Optical study of electronic states in GaAsN 会议论文 conference on optoelectronic and microelectronic materials and devices (commad), sydney, australia, dec 11-13, 2002 Luo XD; Yang CL; Huang JS; Xu ZY; Liu J; Ge WK; Zhang Y; Mascarenhas A; Xin HP; Tu CW 收藏  |  浏览/下载：18/0  |  提交时间：2010/10/29 MOLECULAR-BEAM EPITAXY  TEMPERATURE PHOTOLUMINESCENCE  QUANTUM-WELL  ALLOYS  RELAXATION  GAAS1-XNX   Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 作者:  Jiang DS 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 molecular beam epitaxy  quantum wells  semiconducting IIIV materials  LUMINESCENCE  GAASN   Optical transitions in GaNAs/GaAs single quantum well 会议论文 international workshop on nitride semiconductors (iwn 2000), nagoya, japan, sep 24-27, 2000 Luo XD; Xu ZY; Sun BQ; Pan Z; Li LH; Lin YW; Ge WK 收藏  |  浏览/下载：17/0  |  提交时间：2010/10/29 GaNAs  photoluminescence  band offset  band bowing coefficient  localized exciton  MOLECULAR-BEAM EPITAXY  ALLOYS  TEMPERATURE  GAASN   Effects of the insertion of InAs strain-compensating layers on photoluminescence properties of GaAsN/GaAs quantum-well structures (EI收录) 会议论文 IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC, Beijing, China, September 20, 2004 - September 25, 2004 作者:  Gao, Q.[1];  Tan, H.H.[1];  Sun, B.Q.[2,5];  Gal, M.[2];  Ouyang, L.[3,6] 收藏  |  浏览/下载：4/0  |  提交时间：2019/04/18 Metallorganic chemical vapor deposition  Monolayers  Optical properties  Photoluminescence  Semiconducting gallium compounds  Semiconductor quantum wells  Transmission electron microscopy