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To probe the performance of perovskite memory device:defects property and hysteresis 会议论文
Ziqi Xu; Nengxu Li; Guanhaojie Zheng; Qi Chen; Huanping Zhou
收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03
An empirical study on the equivalence and stability of feature selection for noisy software defect data 会议论文
作者:  Xu, Zhou;  Liu, Jin;  Xia, Zhen;  Yuan, Peipei
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/05
Binocular Stereo Vision Based Obstacle Detection Method for Manipulator 会议论文
International Conference on Electrical Engineering and Automation (ICEEA), Xiamen, China, December 18-19, 2016
作者:  Liu, Qiang;  Zhang XX(张晓雪);  Liu JG(刘金国);  Zhang T(张天);  Ni ZY(倪智宇)
收藏  |  浏览/下载：20/0  |  提交时间：2017/09/12
Defect stability and electronic configuration of off-stoichiometric Ni-X-In (X= Mn, Fe and Co) alloys: A first-principles study 会议论文
International Conference on Materials Applications and Engineering, ICMAE 2016, June 25, 2016 - June 26, 2016
作者:  Zu, Qi Rui;  Bai, Jing;  Wang, Xiao Shu;  Wu, Kai Hong;  Wang, Shuai
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/31
PRESURGERY DESIGN AND BIOMECHANICAL EVALUATION OF PATIENT-SPECIFIC KNEE IMPLANT 会议论文
Rong, Qiguo; Bai, Jianfeng; Huang, Yongling; Lin, Jianhao
收藏  |  浏览/下载：5/0  |  提交时间：2017/12/04
Study of Stability Assessment Method for Deep Surrounding Rock 会议论文
作者:  Mao Zhitong;  Zhu Yanpeng
收藏  |  浏览/下载：7/0  |  提交时间：2019/11/15
Study of stability assessment method for deep surrounding rock 会议论文
Hangzhou, China, July 30, 2014 - July 31, 2014
作者:  Mao, Zhi Tong;  Zhu, Yan Peng
收藏  |  浏览/下载：20/0  |  提交时间：2020/11/15
初始几何缺陷对弦支穹顶结构整体稳定影响的施工偏差概率法 会议论文
张爱林; 刘学春
收藏  |  浏览/下载：3/0  |  提交时间：2017/06/16
Study of gamma-ray irradiation effect on permanent magnets 会议论文
JOURNAL OF APPLIED PHYSICS, 52nd Annual Conference on Magnetism and Magnetic Materials, Tampa, FL, Web of Science
Gao, R. S.; Zhen, L.; Shao, W. Z.; Hao, X. P.; Sun, X. Y.; Yang, L.; Wang, B. Y.
收藏  |  浏览/下载：4/0
The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE) 会议论文
Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China
Liu J. e.; Gao W.; Liao Y.; Jing H.; Fu G.
收藏  |  浏览/下载：19/0  |  提交时间：2013/03/25
The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress  it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping  a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper  controlling different flow ratio of source gas SiH4 and NH3  and a great deal of tests (ellipsometer  infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators  three different capacitance samples in MIS structure were done  degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation  this result indicated that the defect density of this type SiN x was smaller  and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT  SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.  

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