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科研机构
半导体研究所 [11]
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会议论文 [11]
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2008 [2]
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2004 [1]
2003 [1]
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半导体材料 [4]
光电子学 [3]
半导体器件 [2]
半导体物理 [1]
微电子学 [1]
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内容类型:会议论文
专题:半导体研究所
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Neuro-Stimulus Chip with Photodiodes Array for Sub-retinal Implants
会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
作者:
Huang BJ
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2010/03/09
RETINAL PROSTHETIC DEVICE
The influence of substrate nucleation on HVPE-grown GaN thick films - art. no. 684105
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Wei, TB
;
Duan, RF
;
Wang, JX
;
Li, JM
;
Huo, ZQ
;
Zeng, YP
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2010/03/09
HVPE
GaN
nitridation
polarity
etching
Raman scattering study on vibrational modes in Ga1-xMnxN prepared by Mn-ion implantation
会议论文
11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005
Islam MR
;
Chen NF
;
Yamada M
收藏
  |  
浏览/下载:126/8
  |  
提交时间:2010/03/29
Raman scattering
Effect of the implantation of fluorine on the mobility of channel electron for partially depleted SOI nMOSFET
会议论文
7th international conference on solid-state and integrated circuits technology, beijing, peoples r china, oct 18-21, 2004
Zheng, ZS
;
Liu, ZL
;
Zhang, GQ
;
Li, N
;
Fan, K
收藏
  |  
浏览/下载:167/30
  |  
提交时间:2010/03/29
Reduction in crystallographic tilt of lateral epitaxial overgrown GaN by using new patterned shape mask
会议论文
5th international conference on nitride semiconductors (icns-5), nara, japan, may 25-30, 2003
Feng G
;
Shen XM
;
Zhu JJ
;
Zhang BS
;
Yang H
;
Liang JW
收藏
  |  
浏览/下载:15/2
  |  
提交时间:2010/10/29
BUFFER LAYER
SUBSTRATE
DIODES
GROWTH
Studies of 6H-SiC devices
会议论文
korea-china joint symposium on smiconductor physics and device applications, seoul, south korea, dec 05-09, 2001
Wang SR
;
Liu ZL
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2010/11/15
SiC
Schottky
pn junction diodes
MOS capacitor
JUNCTION DIODES
Ti Schottky barrier diodes on n-type 6H-SiC
会议论文
6th international conference on solid-state and integrated-circuit technology, shanghai, peoples r china, oct 22-25, 2001
作者:
Yu F
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2010/10/29
SEMICONDUCTOR
Hydrogen behavior in GaN epilayers grown by NH3-MBE
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Kong MY
;
Zhang JP
;
Wang XL
;
Sun DZ
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2010/11/15
impurities
molecular beam epitaxy
nitrides
semiconducting III-V materials
GALLIUM NITRIDE
SAPPHIRE SUBSTRATE
DEFECTS
HETEROSTRUCTURE
SEMICONDUCTORS
STRESS
Observation of deep electron states in n-type Al-doped ZnS1-xTex grown by molecular beam epitaxy
会议论文
6th international conference on solid-state and integrated-circuit technology, shanghai, peoples r china, oct 22-25, 2001
Lu LW
;
Ge WK
;
Sou IK
;
Wang J
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2010/10/29
ZNSTE
Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy
会议论文
50th iumrs international conference on advanced materials, beijing, peoples r china, jun 13-18, 1999
作者:
Xu B
;
Ye XL
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2010/11/15
quantum dots
high index
molecular beam epitaxy
photoluminescence
SURFACE SEGREGATION
ORIENTED GAAS
INGAAS
ISLANDS
WELLS
DISKS
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