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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 内容类型：会议论文    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 High responsivity ultraviolet photodetector based on crack-free GaN on Si (111) 会议论文 33rd international symposium on compound semiconductors, vancouver, canada, aug 13-17, 2006 Wang, XY (Wang, Xiaoyan); Wang, XL (Wang, Xiaoliang); Wang, BZ (Wang, Baozhu); Xiao, HL (Xiao, Hongling); Liu, HX (Liu, Hongxin); Wang, JX (Wang, Junxi); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin) 收藏  |  浏览/下载：125/38  |  提交时间：2010/03/29 BUFFER LAYER  STRESS  PHOTODIODES  REDUCTION  DETECTORS  SAPPHIRE  EPITAXY  GROWTH   Stress analysis of silica-based arrayed waveguide grating by a finite element method 会议论文 photonics asia symposium 2002, shanghai, peoples r china, oct 14-18, 2002 Deng XQ; Yang QQ; Wang HJ; Hu XW; Wang QM 收藏  |  浏览/下载：18/0  |  提交时间：2010/10/29 finite element method  stress  silica optical waveguide on silicon  birefringence  OPTICAL WAVE-GUIDES  DIFFERENCE METHOD   Hydrogen behavior in GaN epilayers grown by NH3-MBE 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Kong MY; Zhang JP; Wang XL; Sun DZ 收藏  |  浏览/下载：12/0  |  提交时间：2010/11/15 impurities  molecular beam epitaxy  nitrides  semiconducting III-V materials  GALLIUM NITRIDE  SAPPHIRE SUBSTRATE  DEFECTS  HETEROSTRUCTURE  SEMICONDUCTORS  STRESS   High-speed DFB laser and EMLs 会议论文 asia-pacific optical and wireless communications conference (apoc 2001), beijing, peoples r china, nov 12-15, 2001 Wei W; Liu GL; Zhu HL; Zhang JY 收藏  |  浏览/下载：16/0  |  提交时间：2010/10/29 MODULATOR   Investigation on integrated high speed DFB light source and narrow bandwidth RCE photodetector for WDM fiber communication network application 会议论文 conference on advanced photonic sensors, beijing, peoples r china, nov 08-10, 2000 Wang QM; Li C; Pan Z; Luo Y 收藏  |  浏览/下载：11/0  |  提交时间：2010/10/29 gain-coupling DFB laser  EA modulator  RCE photodetector  monolithic integration  MU-M  LASER   Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface 会议论文 10th international conference on molecular beam epitaxy (mbe-x), cannes, france, aug 31-sep 04, 1998 Zhang JP; Sun DZ; Li XB; Wang XL; Kong MY; Zeng YP; Li JM; Lin LY 收藏  |  浏览/下载：7/0  |  提交时间：2010/11/15 STRESS  GROWTH