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科研机构
半导体研究所 [32]
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会议论文 [32]
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2010 [1]
2009 [1]
2008 [1]
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2003 [1]
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半导体物理 [13]
半导体材料 [10]
光电子学 [7]
半导体化学 [1]
半导体器件 [1]
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内容类型:会议论文
专题:半导体研究所
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Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers
会议论文
6th international conference on nanoscience and technology, beijing, peoples r china, jun 04-06, 2007
Wu, BP
;
Wu, DH
;
Xiong, YH
;
Huang, SS
;
Ni, HQ
;
Xu, YQ
;
Niu, ZC
收藏
  |  
浏览/下载:51/0
  |  
提交时间:2010/03/09
InAs Quantum Dots
Strain-compensated InGaAs/InAlAs quantum-cascade lasers
会议论文
14th optoelectronics and communications conference, hong kong, peoples r china, jul 13-17, 2009
Liu FQ (Liu Feng-Qi)
;
Wang ZG (Wang Zhanguo)
;
Li L (Li Lu)
;
Wang LJ (Wang Lijun)
;
Liu JQ (Liu Junqi)
收藏
  |  
浏览/下载:48/2
  |  
提交时间:2011/07/15
A New Edge-Coupled Two-Terminal Double Heterojunction Phototransistor (ECTT-DHPT) and Its DC Characteristics
会议论文
ieee photonicsglobal at singapore, singapore, singapore, dec 08-11, 2008
Wang, LS
;
Zhao, LJ
;
Pan, JQ
;
Zhang, W
;
Wang, H
;
Liang, S
;
Zhu, HL
;
Wang, W
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2010/03/09
P-I-N/HBT
WAVE-GUIDE
INP/INGAAS
FREQUENCY
HBT
Direct Wafer Bonding Technology employing vacuum-cavity pre-bonding
会议论文
conference on optoelectronic materials and devices, gwangju, south korea, sep 05-07, 2006
Yang GH (Yang Guohua)
;
He GR (He Guorong)
;
Zheng WH (Zheng Wanhua)
;
Chen LH (Chen Lianghui)
收藏
  |  
浏览/下载:85/22
  |  
提交时间:2010/03/29
1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy
会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Niu, ZC
;
Zhang, SY
;
Ni, HQ
;
Wu, DH
;
He, ZH
;
Sun, Z
;
Han, Q
;
Wu, RG
收藏
  |  
浏览/下载:224/60
  |  
提交时间:2010/03/29
IMPROVED LUMINESCENCE EFFICIENCY
TEMPERATURE
PHOTOLUMINESCENCE
NITROGEN
ORIGIN
DIODES
SHicon-based resonant-cavity-enhanced photodetectors
会议论文
3rd international conference on group iv photonics, ottawa, canada, sep 13-15, 2006
Cheng BW (Cheng Buwen)
;
Li CB (Li Chuanbo)
;
Mao RW (Mao Rongwei)
;
Yao F (Yao Fei)
;
Xue CL (Xue Chunlai)
;
Zhang JG (Zhang Jianguo)
;
Shi WH (Shi Wenhua)
;
Zuo YH (Zuo Yuhua)
;
Yu JZ (Yu Jinzhong)
;
Wang QM (Wang Qiming)
收藏
  |  
浏览/下载:72/9
  |  
提交时间:2010/03/29
HIGH-SPEED
Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy
会议论文
3rd international conference on materials for advanced technologies/9th international conference on advanced materials, singapore, singapore, jul 03-08, 2005
Jiang, DS
;
Qu, YH
;
Ni, HQ
;
Wu, DH
;
Xu, YQ
;
Niu, ZC
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  |  
浏览/下载:110/24
  |  
提交时间:2010/03/29
molecular beam epitaxy
Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires
会议论文
2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004
Miao, ZH (Miao, Zhenhua)
;
Gong, Z (Gong, Zheng)
;
Fang, ZD (Fang, Zhidan)
;
Niu, ZC (Niu, Zhichuan)
收藏
  |  
浏览/下载:82/21
  |  
提交时间:2010/03/29
atomic hydrogen
molecular beam epitaxy
step arrays
MOLECULAR-BEAM EPITAXY
ATOMIC-HYDROGEN
VICINAL SURFACE
QUANTUM DOTS
GROWTH
TEMPERATURE
IRRADIATION
MECHANISM
MBE
Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots
会议论文
3rd asian conference on chemical vapor deposition, taipei, taiwan, nov 12-14, 2004
Kong LM
;
Cai JF
;
Wu ZY
;
Gong Z
;
Niu ZC
;
Feng ZC
收藏
  |  
浏览/下载:166/29
  |  
提交时间:2010/03/29
time-resolved photoluminescence
Molecular-beam epitaxial growth of position controlled InAs islands on cleaved edge of InGaAs/GaAs superlattice
会议论文
13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004
作者:
Jin P
;
Xu B
收藏
  |  
浏览/下载:127/16
  |  
提交时间:2010/03/29
QUANTUM DOTS
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