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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 内容类型：会议论文    专题：长春光学精密机械与物理研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Design of the JPEG2000 compression system based on ADV212 会议论文 2nd International Conference on Precision Mechanical Instruments and Measurement Technology, ICPMIMT 2014, May 30, 2014 - May 31, 2014, Chongqing, China Li G.-N.; Liu Y.-Y.; Han S.-L.; Jin L.-X. 收藏  |  浏览/下载：20/0  |  提交时间：2015/04/27 A MPEG-4 encoder based on TMS320C6416 会议论文 5th International Symposium on Photoelectronic Detection and Imaging, ISPDI 2013, June 25, 2013 - June 27, 2013, Beijing, China Li G.-J.; Liu W.-N. 收藏  |  浏览/下载：9/0  |  提交时间：2014/05/15 Control of N/N2 species ratio in NO plasma for p-type doping of ZnO (EI CONFERENCE) 会议论文 Chen X.; Zhang Z.; Yao B.; Jiang M.; Wang S.; Li B.; Shan C.; Liu L.; Zhao D.; Shen D. 收藏  |  浏览/下载：15/0  |  提交时间：2013/03/25 Nitrogen-doped ZnO thin films were grown on c-plane sapphire (Al 2O3) substrates via plasma-assisted molecular beam epitaxy using plasma activated nitric oxide (NO) as the oxygen source and dopant. X-ray diffraction measurements indicate that a small NO flux benefits the crystal quality of the thin films. Hall effect measurements indicate that the electron density of the ZnO films decreases gradually with decreasing NO flux  and the conduction reverses to p-type at a certain flux. Optical emission spectra indicate that the N atom content in the NO plasma increases with decreasing NO flux  and the origin of this is discussed. X-ray photoelectron spectroscopy measurements demonstrate that the number of N atom occupied O sites in the ZnO lattice increases correspondingly. 2011 American Institute of Physics.   The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE) 会议论文 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China Liu J. e.; Gao W.; Liao Y.; Jing H.; Fu G. 收藏  |  浏览/下载：19/0  |  提交时间：2013/03/25 The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress  it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping  a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper  controlling different flow ratio of source gas SiH4 and NH3  and a great deal of tests (ellipsometer  infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators  three different capacitance samples in MIS structure were done  degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation  this result indicated that the defect density of this type SiN x was smaller  and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT  SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.   Fabrication and electron emission of carbon microtubes (EI CONFERENCE) 会议论文 Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005, July 10, 2005 - July 14, 2005, Oxford, United kingdom Wang W.; Xia Y.; Lei D.; Chen S.; Liu L.; Chen M.; Liang J. 收藏  |  浏览/下载：29/0  |  提交时间：2013/03/25 Carbon nanotubes have been attracting attention because of their unique physical properties and their application potential for field emission cathode. Carbon nanotubes possess the following properties favorable for field emission material  such as a high aspect ratio and sharp tip  high chemical stability  high mechanical strength  stable at high temperature. Some research works on carbon nanotubes field emitter and field emission display have been reported. Here  a kind of carbon microtubes and its field emission properties are introduced. They have some different properties with carbon nanotubes  and the density is lower than carbon nanotubes bundles. These carbon microtubes are directly synthesized by liquidoid epitaxy method on silicon substrates at low temperature. The field emission properties of carbon microtubes are reported too. Carbon microtubes film is synthesized in liquid by electrolysis. The graphite plate is as anode  and n-silicon substrate with resistivity of 4-8 cm is as cathode. The electrolysis current is about 5-8mA/cm2  and applied voltage is 800-1500V. Temperatures of the methanol base solution is maintained at 60C in process of deposition of carbon microtubes. Carbon microtubes film is observed by scanning electron microscopy(SEM)  as shown in fig.1(a  b). The wall's thickness of carbon microtube is about 60nm. The diameter of carbon microtube is about 0.8 m. Raman spectrum of carbon microtubes film shows the two peaks at 1342and 1560cm-1. The field emission properties of carbon microtubes are measured in high vacuum chamber(10-5Pa). The emission area of carbon microtubes is 0.5cm 0.5cm. The threshold of field emission of the carbon microtubes film is about 3.6V/ m. Field emission property of carbon microtubes film is shown in fig.2. Another  when the electric field between anode and cathode is 10V/ m  the electric field distribution on single carbon microtube is also given after calculation according to electric field theory. Fig 3 shows that electric field distribution vertical section on the of single carbon microtube top with 2 m of highness. These results may help us to understand field emission properties of carbon microtubes. According to research results  it is found that liquidoid synthesis is simple method to produce carbon microtubes cold cathode material  and the carbon microtubes have better field emission properties. 2005 IEEE.