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科研机构
兰州大学 [4]
内容类型
会议论文 [4]
发表日期
2011 [2]
2010 [2]
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computer t... [1]
crystal la... [1]
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内容类型:会议论文
专题:兰州大学
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Synthesis and photoluminescence properties of the novel red phosphor Gd2MoB2O9: Eu
会议论文
2011 International Conference on Advanced Design and Manufacturing Engineering, ADME 2011, Guangzhou, China, September 16, 2011 - September 18, 2011
作者:
He, Ling
;
Sun, Weimin
;
Ding, Yutian
;
Wang, Yuhua
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2017/01/20
Europium
Charge transfer
Design
Gadolinium
Light emission
Manufacture
Phosphors
Photoluminescence
Synthesis (chemical)
Broad bands
CT bands
Doping concentration
Emission peaks
Excitation bands
Host absorptions
Novel red phosphor
Photoluminescence properties
Red emissions
Red luminescence
UV-VUV
Influence of Na doping on structural and optical properties of (Na,Mg):ZnO thin films prepared by sol-gel process
会议论文
2011 Symposium on Photonics and Optoelectronics, SOPO 2011, Wuhan, China, May 16, 2011 - May 18, 2011
作者:
Zhang, CaiZhen
;
Chen, Yonggang
;
Liu, Su
;
Wang, YongShun
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2017/01/20
Film preparation
Crystallite size
Gels
Optical films
Optical properties
Optoelectronic devices
Oxide films
Photonics
Semiconductor doping
Sodium
Sol-gel process
Sol-gels
Sols
Spin glass
Substrates
Thin films
Zinc
Zinc coatings
Zinc oxide
Co-doped
High quality
Low concentrations
Luminescent characteristics
Mg-doped
Na concentration
Na doped
Na doping
Nominal composition
Preferred orientations
Pyrex glass
Spin-coating method
Structural and optical properties
Zn1-xMgxO
ZnO
Bistable resistance switching of Cu/Cu:HfO2/Pt for nonvolatile memory application
会议论文
2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, November 1, 2010 - November 4, 2010
作者:
Wang, Yan
;
Long, Shi-Bing
;
Lv, Hang-Bing
;
Liu, Qi
;
Wang, Qin
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2017/01/20
Switching
Doping (additives)
Hafnium
Hafnium oxides
Integrated circuits
Oxides
Platinum
Random access storage
Switching systems
Bistable resistance
Cu-doping
DC electrical
Fast operation
Metallic filaments
Non-volatile memories
Non-volatile memory application
Resistance switching
Resistive random access memory
Resistive switching
Stable state
Temperature test
Oxygen vacancies induced ferromagnetism in undoped and Cr doped SnO 2 nanowires
会议论文
Nanotechnology 2010: Advanced Materials, CNTs, Particles, Films and Composites - 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010, Anaheim, CA, United states, June 21, 2010 - June 24, 2010
作者:
Zhang, Li
;
Ge, Shihui
;
Zuo, Yalu
;
Qing, Jing
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2017/01/20
Oxygen vacancies
Chemical vapor deposition
Chromium
Doping (additives)
Ferromagnetism
Films
Nanotechnology
Nanowires
Oxygen
Polarons
Bound magnetic polarons
Cr-doped
Cr-doping
Ferromagnetic properties
Room-temperature ferromagnetism
Surface oxygen vacancies
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