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| Gamma phase strengthening alloy comprises aluminum, solid solution strengthening element containing iron and/or nickel, precipitation strengthening element containing niobium and/or hafnium, and boron and/or carbon. 专利 申请日期: 2018-01-01, 公开日期: 2018-03-23 作者: MA Q DONG H ZHANG Y WANG Q DONG C
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| Method for preparing solid-phase microextraction tube, involves adding 1-ethyl-3-(3-dimethylaminopropyl)carbodiimide/N-hydroxysuccinimide solution to supernatant, filling graphene oxide solution in tube and placing in water bath, and drying. 专利 申请日期: 2014-01-01, 公开日期: 2014-03-19 作者: CHEN J QUAN X TAN F LI L
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| - 专利 专利号: JP1991022052B2, 申请日期: 1991-03-26, 公开日期: 1991-03-26 作者: NAKAJIMA KAZUO
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:7/0  |  提交时间:2020/01/13 |
| Manufacture of semiconductor laser 专利 专利号: JP1988078588A, 申请日期: 1988-04-08, 公开日期: 1988-04-08 作者: USHIJIMA ICHIRO; GOTO HIROSHI
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:4/0  |  提交时间:2020/01/18 |
| Method for liquid-phase growth 专利 专利号: JP1986181124A, 申请日期: 1986-08-13, 公开日期: 1986-08-13 作者: SHINOHARA YASUO
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| Growth method for semiconductor crystal 专利 专利号: JP1983175825A, 申请日期: 1983-10-15, 公开日期: 1983-10-15 作者: OOTA KAZUNARI; YOSHIKAWA AKIO; SUGINO TAKASHI; KAZUMURA MASARU
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| Liquid phase epitaxial growth 专利 专利号: JP1983168219A, 申请日期: 1983-10-04, 公开日期: 1983-10-04 作者: ISOZUMI SHIYOUJI
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:11/0  |  提交时间:2020/01/13 |
| Liquid phase epitaxial growth method of semiconductor 专利 专利号: JP1983046628A, 申请日期: 1983-03-18, 公开日期: 1983-03-18 作者: NAMISAKI HIROBUMI; SUZAKI WATARU; HIRANO RIYOUICHI
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| Liquid phase epitaxy method 专利 专利号: JP1988098122A, 公开日期: 1988-04-28 作者: KUBO MINORU; ISHINO MASATO; SASAI YOICHI; OGURA MOTOTSUGU
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:7/0  |  提交时间:2019/12/26 |