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Electron beam melting device for melting polycrystalline silicon material, consists of water-cooled smelting crucible having inner surface provided with silicon carbide substrate having preset thickness and graphite substrate, in order. 专利
申请日期: 2015-01-01, 公开日期: 2015-04-22
作者:  JIANG D LI P TAN Y SHI S WANG D
收藏  |  浏览/下载:5/0  |  提交时间:2019/12/09
Local heating solidification polycrystalline silicon impurity removing device, has furnace body whose lower part is connected with graphite pedestal, and moving shaft whose lower end is connected with control device in solid state. 专利
申请日期: 2014-01-01, 公开日期: 2014-11-05
作者:  JIANG D LI P LIN H TAN Y SHI S WEN
收藏  |  浏览/下载:2/0  |  提交时间:2019/12/11
Structure of semiconductor laser and manufacture of said laser 专利
专利号: JP1986210689A, 申请日期: 1986-09-18, 公开日期: 1986-09-18
作者:  SHIMA KATSUTO
收藏  |  浏览/下载:11/0  |  提交时间:2019/12/31


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