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Metallurgical removal of polycrystalline slagging agent boron element, involves smelting waste slagging agent and high-purity silicon material, reverse-diffusion of boron to silicon, cooling, cutting silicon, and removing boron. 专利
申请日期: 2015-01-01, 公开日期: 2015-04-29
作者:  LI J TAN Y WANG D
收藏  |  浏览/下载：7/0  |  提交时间：2019/12/09
Removal of boron impurity in polysilicon by electrochemically etching of polysilicon film to form porous silicon, performing stabilization treatment, introducing into electron beam melting furnace, and setting vacuum chamber degree. 专利
申请日期: 2015-01-01, 公开日期: 2015-03-18
作者:  GUO S LI J QIN S TAN Y SHI S YOU X
收藏  |  浏览/下载：9/0  |  提交时间：2019/12/09
Electron beam melting overheating polycrystalline silicon metal impurities removal apparatus comprises water-cooled copper crucible with inner side wall tilted at specified angle. 专利
申请日期: 2015-01-01, 公开日期: 2015-04-29
作者:  JIANG D TAN Y SHI S WANG D
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/09
多晶硅假栅移除后的监控方法 专利
专利号: US8501500, 申请日期: 2013-08-06, 公开日期: 2012-12-27
作者:  杨涛;  赵超;  李俊峰;  闫江;  陈大鹏
收藏  |  浏览/下载：10/0  |  提交时间：2012/12/16
Method of fabricating optoelectronic devices directly attached to silicon-based integrated circuits 专利
专利号: US20130122617A1, 申请日期: 2013-05-16, 公开日期: 2013-05-16
作者:  LOTT, JAMES A.;  LEDENTSOV, NIKOLAI;  SHCHUKIN, VITALY
收藏  |  浏览/下载：8/0  |  提交时间：2019/12/31
Method of removing material on solid bodies with degradation of the time and/or spatial coherence of the laser beam 专利
专利号: EP2404697A1, 申请日期: 2012-01-11, 公开日期: 2012-01-11
作者:  KNORZ, ANNEROSE;  PREU, RALF;  PETERS, MARIUS;  HAUSER, HUBERT;  BLÄSI, BENEDIKT
收藏  |  浏览/下载：21/0  |  提交时间：2019/12/31
Removal of boron impurity from industrial silicon by smelting industrial silicon and metal, cooling and crushing, uniformly mixing low-boron silicon dioxide with modified silicon powder, acid washing, and disproportion smelting. 专利
申请日期: 2011-01-01, 公开日期: 2011-11-23
作者:  LI J LI Y TAN Y WU S
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/18
Removal of boron impurity in polycrystalline silicon by heating silicon powder via high-temperature heating furnace to form silicon oxide film having oxidized surface, and contacting film with electron beam in electron beam melting furnace. 专利
申请日期: 2010-01-01, 公开日期: 2010-11-24
作者:  DONG W TAN Y JIANG D ZOU R
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/24
Removal of boron from polycrystalline silicon via partial evaporation, by partially melting polycrystalline silicon with electron beam, evaporating melted silicon, and collecting accumulated polycrystalline silicon. 专利
申请日期: 2010-01-01, 公开日期: 2010-05-19
作者:  DONG W JIANG D LI G TAN Y
收藏  |  浏览/下载：6/0  |  提交时间：2019/12/24
Manufacture of optoelectronic integrated circuit 专利
专利号: JP1990143562A, 申请日期: 1990-06-01, 公开日期: 1990-06-01
作者:  OISHI TOSHIYUKI;  ABE YUJI;  SUGIMOTO HIROSHI;  OTSUKA KENICHI;  MATSUI TERUHITO
收藏  |  浏览/下载：8/0  |  提交时间：2020/01/13

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