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Process for producing an epitaxial layer of gallium nitride 专利
专利号: US7118929, 申请日期: 2006-10-10, 公开日期: 2006-10-10
作者:  FRAYSSINET, ERIC;  BEAUMONT, BERNARD;  FAURIE, JEAN-PIERRE;  GIBART, PIERRE
收藏  |  浏览/下载:9/0  |  提交时间:2019/12/24
Method of fabricating a semiconductor structure having quantum wires and a semiconductor device including such structure 专利
专利号: US6696372, 申请日期: 2004-02-24, 公开日期: 2004-02-24
作者:  WANG, BENZHONG;  CHUA, SOO JIN
收藏  |  浏览/下载:11/0  |  提交时间:2019/12/26
Method of making an article comprising an oxide layer on a GaAs-based semiconductor body 专利
专利号: US6271069, 申请日期: 2001-08-07, 公开日期: 2001-08-07
作者:  CHEN, YOUNG-KAI;  CHO, ALFRED YI;  HOBSON, WILLIAM SCOTT;  HONG, MINGHWEI;  KUO, JENN-MING
收藏  |  浏览/下载:9/0  |  提交时间:2019/12/24
Formation of laser mirror facets and integration of optoelectronics 专利
专利号: US4933302, 申请日期: 1990-06-12, 公开日期: 1990-06-12
作者:  COSTRINI, GREGORY;  JAMBOTKAR, CHAKRAPANI G.
收藏  |  浏览/下载:12/0  |  提交时间:2019/12/24
Method of epitaxial growth of (IV)x(iii-v)(1-x) alloy and method of converting group iii-v semiconductor structure into irregular alloy and hetero structure and semiconductor device constituted by the same 专利
专利号: JP1989001227A, 申请日期: 1989-01-05, 公开日期: 1989-01-05
作者:  ROBAATO DEII BAANAMU
收藏  |  浏览/下载:6/0  |  提交时间:2019/12/31
Method for fabricating high efficiency semi-planar electro-optic modulators 专利
专利号: US3916510, 申请日期: 1975-11-04, 公开日期: 1975-11-04
作者:  MARTIN, WILLIAM E.
收藏  |  浏览/下载:9/0  |  提交时间:2019/12/24


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