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Self-compliance multilevel storage characteristic in HfO2-based device 期刊论文
Chinese Physics B, 2016, 卷号: 25, 期号: 10, 页码: 106102-1-106102-3
作者:  Gao, Xiao-Ping;  Fu, Li-Ping;  Chen, Chuan-Bing;  Yuan, Peng;  Li, Ying-Tao
收藏  |  浏览/下载:6/0  |  提交时间:2017/01/12
Feasibility of Schottky diode as selector for bipolar-type resistive random access memory applications 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 104, 期号: 13, 页码: -
作者:  Li, YT;  Gong, QC;  Jiang, XY
收藏  |  浏览/下载:6/0  |  提交时间:2015/05/25
Investigation of resistive switching behaviours in WO3-based RRAM devices 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 1, 页码: -
作者:  Li, YT;  Long, SB;  Lu, HB;  Liu, Q;  Wang, Q
收藏  |  浏览/下载:2/0  |  提交时间:2015/05/25


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