QQ客服 官方微博 反馈留言

浏览/检索结果: 共8条，第1-8条 帮助 限定条件 学科主题：Physics, Applied     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 structural and electrical characteristics of rf sputtered yon gate dielectrics and their thin-film transistor applications 期刊论文 JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 15, 页码: - Liu Zhimin; Liang Lingyan; Yu Zheng; He Shikun; Ye Xiaojuan; Sun Xilian; Sun Aihua; Cao Hongtao 收藏  |  浏览/下载：18/0  |  提交时间：2011/05/10 Dielectric materials   Fine-grained BaZr0.2Ti0.8O3 thin films for tunable device applications 期刊论文 JOURNAL OF APPLIED PHYSICS, 2007, 卷号: 101, 期号: 8, 页码: 86101-86101 Ying, Z; Yun, P; Wang, DY; Zhou, XY; Song, ZT; Feng, SL; Wang, Y; Chan, HLW 收藏  |  浏览/下载：13/0  |  提交时间：2012/03/24 ENHANCED INPLANE FERROELECTRICITY  SINGLE-CRYSTAL SUBSTRATE  DIELECTRIC-PROPERTIES  TRANSITION  CERAMICS   Characteristics of HfxSiyO films grown on Si0.8Ge0.2 layer by electron-beam evaporation 期刊论文 APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 12, 页码: 122906-122906 Cheng, XH; Song, ZR; Yu, YY; Yang, WW; Shen, DS 收藏  |  浏览/下载：17/0  |  提交时间：2012/03/24 GATE DIELECTRICS  HFO2  OXIDATION  SILICON   Investigation of Ge nanocrytals in a metal-insulator-semiconductor structure with a HfO2/SiO2 stack as the tunnel dielectric 期刊论文 APPLIED PHYSICS LETTERS, 2005, 卷号: 86, 期号: 11, 页码: 113105-113105 Wang, SY; Liu, WL; Wan, Q; Dai, JY; Lee, PF; Suhua, L; Shen, QW; Zhang, M; Song, ZT; Lin, CL 收藏  |  浏览/下载：11/0  |  提交时间：2012/03/24 NANOCRYSTAL MEMORY DEVICE  GATE DIELECTRICS  CHARGE-STORAGE  SILICON NANOCRYSTALS  THERMAL-STABILITY  DEPOSITION   Self-organized Ge nanocrystals embedded in HfAlO fabricated by pulsed-laser deposition and application to floating gate memory 期刊论文 APPLIED PHYSICS LETTERS, 2005, 卷号: 86, 期号: 1, 页码: 13110-13110 Liu, WL; Lee, PF; Dai, JY; Wang, J; Chan, HLW; Choy, CL; Song, ZT; Feng, SL 收藏  |  浏览/下载：14/0  |  提交时间：2012/03/24 CHEMICAL-VAPOR-DEPOSITION  DEVICE  HFO2  DIELECTRICS  OXIDATION  SIO2   High frequency capacitance-voltage characterization of Al2O3/ZrO2/Al2O3 in fully depleted silicon-on-insulator metal-oxide-semiconductor capacitors 期刊论文 APPLIED PHYSICS LETTERS, 2003, 卷号: 83, 期号: 25, 页码: 5238-5240 Zhang, NL; Song, ZT; Shen, QW; Wu, YJ; Liu, QB; Lin, CL; Duo, XZ; Zheng, LR; Ding, YF; Zhu, ZQ 收藏  |  浏览/下载：8/0  |  提交时间：2012/03/24 ZRO2/SIO2/SI LAYERED STRUCTURE  THERMAL-STABILITY  MOS CAPACITORS  FILM  ZRO2  DIELECTRICS  HFO2   Stress current calculation of stacked dielectrics in time dependent dielectric breakdown 期刊论文 JOURNAL OF APPLIED PHYSICS, 2003, 卷号: 94, 期号: 6, 页码: 4032-4035 Yang, WW; Cheng, XH; Xing, YM; Li, WJ; Yu, YH 收藏  |  浏览/下载：16/0  |  提交时间：2012/03/24 TUNNELING CURRENTS  OXIDE THICKNESS  LEAKAGE CURRENT  MOS CAPACITORS  MODEL  INTERFACES  SIO2   Memory and negative photoconductivity effects of Ge nanocrystals embedded in ZrO2/Al2O3 gate dielectrics 期刊论文 APPLIED PHYSICS LETTERS, 2003, 卷号: 83, 期号: 1, 页码: 138-140 Wan, Q; Zhang, NL; Liu, WL; Lin, CL; Wang, TH 收藏  |  浏览/下载：17/0  |  提交时间：2012/03/24 SI NANOCRYSTALS  SEMICONDUCTOR STRUCTURE  ROOM-TEMPERATURE  SILICON  FILMS  SIO2-FILMS  STABILITY  GROWTH  MATRIX