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Boron Embedded in Metal Iron Matrix as a Novel Anode Material of Excellent Performance 期刊论文
ADVANCED MATERIALS, 2018, 卷号: 30, 期号: 35
作者:  Dong, Wujie;  Zhao, Yantao;  Wang, Xin;  Yuan, Xiaotao;  Bu, Kejun
收藏  |  浏览/下载:38/0  |  提交时间:2018/12/28
Adsorption of precious and coinage metals on Rh (111), Ru (0001) and W (110) surfaces 期刊论文
APPLIED SURFACE SCIENCE, 2017, 卷号: 410, 页码: 282-290
Zhu, Quanxi; Wang, Shao-qing
收藏  |  浏览/下载:143/0  |  提交时间:2017/08/17
Impurity mediated absorption continuum in single-walled carbon nanotubes 期刊论文
APPLIED PHYSICS LETTERS, 2007, 卷号: 90, 期号: 2, 页码: 23106-23106
Zhang, C; Cao, JC; Guo, XG; Liu, F
收藏  |  浏览/下载:12/0  |  提交时间:2011/12/17
Investigation of Ge nanocrytals in a metal-insulator-semiconductor structure with a HfO2/SiO2 stack as the tunnel dielectric 期刊论文
APPLIED PHYSICS LETTERS, 2005, 卷号: 86, 期号: 11, 页码: 113105-113105
Wang, SY; Liu, WL; Wan, Q; Dai, JY; Lee, PF; Suhua, L; Shen, QW; Zhang, M; Song, ZT; Lin, CL
收藏  |  浏览/下载:12/0  |  提交时间:2012/03/24
Germanium movement mechanism in SiGe-on-insulator fabricated by modified Ge condensation 期刊论文
JOURNAL OF APPLIED PHYSICS, 2005, 卷号: 97, 期号: 6, 页码: 64504-64504
Di, ZF; Chu, PK; Zhang, M; Liu, WL; Song, ZT; Lin, CL
收藏  |  浏览/下载:30/0  |  提交时间:2012/03/24
Improved analytical model for threshold behavior of sidegating effect in GaAs metal-semiconductor field-effect transistors induced by impact ionization of deep traps 期刊论文
JOURNAL OF APPLIED PHYSICS, 1999, 卷号: 85, 期号: 1, 页码: 604-607
Zhao, FC; Xia, GQ; Du, LX; Tan, HZ
收藏  |  浏览/下载:13/0  |  提交时间:2012/03/25


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