CORC

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CORC

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Room temperature continuous-wave operation of InAs/InP (100) quantum dot lasers grown by gas-source molecular-beam epitaxy 期刊论文
APPLIED PHYSICS LETTERS, 2008, 卷号: 93, 期号: 11, 页码: 111109-111109
Li, SG; Gong, Q; Lao, YF; He, K; Li, J; Zhang, YG(张永刚）; Feng, SL; Wang, HL
收藏  |  浏览/下载：11/0  |  提交时间：2012/03/24
1.3 MU-M  GAAS  
Self-organized Ge nanocrystals embedded in HfAlO fabricated by pulsed-laser deposition and application to floating gate memory 期刊论文
APPLIED PHYSICS LETTERS, 2005, 卷号: 86, 期号: 1, 页码: 13110-13110
Liu, WL; Lee, PF; Dai, JY; Wang, J; Chan, HLW; Choy, CL; Song, ZT; Feng, SL
收藏  |  浏览/下载：14/0  |  提交时间：2012/03/24
Characteristics and polarization-enhanced model of wurtzite aluminum nitride thin films synthesized on Si(100) substrates by pulsed laser deposition 期刊论文
JOURNAL OF APPLIED PHYSICS, 2003, 卷号: 94, 期号: 3, 页码: 1934-1940
An, ZH; Men, CL; Yu, J; Chu, PK; Lin, CL
收藏  |  浏览/下载：18/0  |  提交时间：2012/03/24
Magnetospectroscopy of high-purity InP grown by gas source molecular beam epitaxy 期刊论文
APPLIED PHYSICS LETTERS, 1998, 卷号: 72, 期号: 12, 页码: 1487-1488
Shi, XH; Liu, PL; Shi, GL; Hu, CM; Chen, ZH; Shen, SC; Chen, JX; Xin, HP; Li, AZ
收藏  |  浏览/下载：13/0  |  提交时间：2012/03/25
Photothermal ionization identification of residual donors in high purity InP grown by gas source molecular beam epitaxy 期刊论文
JOURNAL OF APPLIED PHYSICS, 1996, 卷号: 80, 期号: 8, 页码: 4491-4494
Shi, XH; Liu, PL; Shen, SC; Chen, JX; Xin, HP; Li, AZ
收藏  |  浏览/下载：13/0  |  提交时间：2012/03/25
Demonstration of light-hole behavior in quaternary GaInAsSb/AlGaAsSb quantum wells using infrared photoluminescence spectroscopy 期刊论文
APPLIED PHYSICS LETTERS, 1996, 卷号: 69, 期号: 7, 页码: 952-954
Shen, WZ; Shen, SC; Tang, WG; Chang, Y; Zhao, Y; Liu, AZ
收藏  |  浏览/下载：8/0  |  提交时间：2012/03/25
MOLECULAR-BEAM EPITAXY OF GAAS ON SI-ON-INSULATOR 期刊论文
APPLIED PHYSICS LETTERS, 1991, 卷号: 59, 期号: 2, 页码: 210-212
ZHU, WH; YU, YH; LIN, CL; LI, AZ; Zou, SC(邹世昌）; HEMMENT, PLF
收藏  |  浏览/下载：97/0  |  提交时间：2012/03/25

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