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科研机构
半导体研究所 [16]
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期刊论文 [15]
会议论文 [1]
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2011 [2]
2010 [1]
2009 [3]
2008 [1]
2006 [1]
2002 [1]
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半导体物理 [16]
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Raman study of ultrathin Fe(3)O(4) films on GaAs(001) substrate: stoichiometry, epitaxial orientation and strain
期刊论文
journal of raman spectroscopy, 2011, 卷号: 42, 期号: 6, 页码: 1388-1391
Zhang, J
;
Tan, PH
;
Zhao, WJ
;
Lu, J
;
Zhao, JH
收藏
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浏览/下载:22/0
  |  
提交时间:2012/01/06
Raman spectroscopy
ultrathin Fe(3)O(4) film
crystal orientation
strain
phonon strain-shift coefficient
PULSED-LASER DEPOSITION
THIN-FILMS
SPIN-TRANSPORT
MAGNETITE
SEMICONDUCTORS
SPINTRONICS
SCATTERING
CORROSION
DEVICES
GROWTH
First principle study of the thermal conductance in graphene nanoribbon with vacancy and substitutional silicon defects
期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 11, 页码: article no.113114
Jiang JW
;
Wang BS
;
Wang JS
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浏览/下载:52/4
  |  
提交时间:2011/07/05
Optical properties of UO2 and PuO2
期刊论文
journal of nuclear materials, 2010, 卷号: 400, 期号: 2, 页码: 151-156
Shi HL (Shi Hongliang)
;
Chu MF (Chu Mingfu)
;
Zhang P (Zhang Ping)
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  |  
浏览/下载:75/0
  |  
提交时间:2010/06/18
ELECTRONIC-STRUCTURE
URANIUM-DIOXIDE
POINT-DEFECTS
PHOTOEMISSION
ENERGY
APPROXIMATION
ENERGETICS
PLUTONIUM
CRYSTAL
SPECTRA
Room temperature photoluminescence of tensile-strained Ge/Si0.13Ge0.87 quantum wells grown on silicon-based germanium virtual substrate
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 14, 页码: art. no. 141902
Chen YH
;
Li C
;
Zhou ZW
;
Lai HK
;
Chen SY
;
Ding WC
;
Cheng BW
;
Yu YD
收藏
  |  
浏览/下载:93/14
  |  
提交时间:2010/03/08
chemical vapour deposition
elemental semiconductors
energy gap
germanium
Ge-Si alloys
photoluminescence
semiconductor epitaxial layers
semiconductor quantum wells
silicon
tensile strength
Spin relaxation and dephasing mechanism in (Ga,Mn)As studied by time-resolved Kerr rotation
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 14, 页码: art. no. 142109
作者:
Zhang XH
;
Chen L
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  |  
浏览/下载:109/22
  |  
提交时间:2010/03/08
Curie temperature
ferromagnetic materials
gallium compounds
Kerr magneto-optical effect
magnetic relaxation
magnetic thin films
manganese compounds
semimagnetic semiconductors
spin dynamics
time resolved spectra
Anisotropic transport in quantum waveguides due to the spin-orbit interactions
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 5, 页码: art. no. 052108
Wang M
;
Chang K
;
Chan KS
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浏览/下载:179/51
  |  
提交时间:2010/03/08
crystal orientation
electric admittance
electron waveguides
quantum interference phenomena
spin-orbit interactions
Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles
期刊论文
physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 195206
Shi LJ
;
Zhu LF
;
Zhao YH
;
Liu BG
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  |  
浏览/下载:217/56
  |  
提交时间:2010/03/08
ab initio calculations
aluminium compounds
annealing
band structure
chromium
Curie temperature
density functional theory
exchange interactions (electron)
ferromagnetic materials
III-V semiconductors
semimagnetic semiconductors
total energy
vacancies (crystal)
Raman evidence for atomic correlation between the two constituent tubes in double-walled carbon nanotubes
期刊论文
physical review b, 2006, 卷号: 73, 期号: 11, 页码: art.no.115430
作者:
Tan PH
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  |  
浏览/下载:36/0
  |  
提交时间:2010/04/11
DIAMETER DISTRIBUTION
D-BAND
SCATTERING
SPECTROSCOPY
GRAPHITE
ORIGIN
Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers
期刊论文
ieee transactions on electron devices, 2002, 卷号: 49, 期号: 2, 页码: 314-318
Leung BH
;
Chan NH
;
Fong WK
;
Zhu CF
;
Ng SW
;
Lui HF
;
Tong KY
;
Surya C
;
Lu LW
;
Ge WK
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  |  
浏览/下载:129/0
  |  
提交时间:2010/08/12
deep level transient Fourier spectroscopy
(DLTFS)
gallium nitride (GaN)
intermediate-temperature buffer layer (ITBF)
low-frequency noise
RESONANT-TUNNELING DIODES
GENERATION-RECOMBINATION NOISE
RANDOM-TELEGRAPH NOISE
ULTRAVIOLET PHOTODETECTORS
DEVICES
Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Niu ZC
;
Wang XD
;
Miao ZH
;
Feng SL
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  |  
浏览/下载:11/0
  |  
提交时间:2010/11/15
crystal morphology
quantum dots
molecular beam epitaxy
semiconducting gallium arsenide
semiconducting indium gallium arsenide
1.35 MU-M
GAAS-SURFACES
PHOTOLUMINESCENCE
ISLANDS
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