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科研机构
半导体研究所 [22]
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期刊论文 [20]
会议论文 [2]
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2011 [2]
2010 [1]
2009 [2]
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半导体物理 [22]
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GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy
期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 33, 页码: 335102
He JF
;
Wang HL
;
Shang XJ
;
Li MF
;
Zhu Y
;
Wang LJ
;
Yu Y
;
Ni HQ
;
Xu YQ
;
Niu ZC
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2012/01/06
1.3 MU-M
STRAIN RELIEF
LASERS
SUBSTRATE
PHOTOLUMINESCENCE
DISLOCATIONS
OPERATION
RANGE
First principles study of the electronic properties of twinned SiC nanowires
期刊论文
journal of nanoparticle research, 2011, 卷号: 13, 期号: 1, 页码: 185-191
作者:
Li JB
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  |  
浏览/下载:100/6
  |  
提交时间:2011/07/05
Twinned SiC nanowires
Electronic properties
Ab initio
Modeling and simulation
SILICON-CARBIDE NANOWIRES
FIELD-EMISSION PROPERTIES
MOLECULAR-BEAM EPITAXY
INAS NANOWIRES
GROWTH
NANOTUBES
NITRIDE
DIFFUSION
NANORODS
ENERGY
Density Gradient Ultracentrifugation of Nanotubes: Interplay of Bundling and Surfactants Encapsulation
期刊论文
journal of physical chemistry c, 2010, 卷号: 114, 期号: 41, 页码: 17267-17285
Bonaccorso
;
F (Bonaccorso
;
F.)
;
Hasan
;
T (Hasan
;
T.)
;
Tan PH (Tan P. H.)
;
Sciascia
;
C (Sciascia
;
C.)
;
Privitera
;
G (Privitera
;
G.)
;
Di Marco
;
G (Di Marco
;
G.)
;
Gucciardi
;
PG (Gucciardi
;
P. G.)
;
Ferrari
;
AC (Ferrari
;
A. C.)
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  |  
浏览/下载:62/0
  |  
提交时间:2010/11/02
WALLED CARBON NANOTUBES
SODIUM DODECYL-SULFATE
BILE-SALT MICELLES
EXCITON ENERGY-TRANSFER
CO-MO CATALYSTS
RAMAN-SPECTROSCOPY
OPTICAL-PROPERTIES
ABSORPTION-SPECTROSCOPY
SEDIMENTATION ANALYSIS
ULTRAFAST PHOTONICS
Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 12, 页码: art. no. 123705
Chen J
;
Fan WJ
;
Xu Q
;
Zhang XW
;
Li SS
;
Xia JB
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  |  
浏览/下载:82/4
  |  
提交时间:2010/03/08
EMISSION
SPECTRA
LASERS
8-BAND
Room temperature photoluminescence of tensile-strained Ge/Si0.13Ge0.87 quantum wells grown on silicon-based germanium virtual substrate
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 14, 页码: art. no. 141902
Chen YH
;
Li C
;
Zhou ZW
;
Lai HK
;
Chen SY
;
Ding WC
;
Cheng BW
;
Yu YD
收藏
  |  
浏览/下载:93/14
  |  
提交时间:2010/03/08
chemical vapour deposition
elemental semiconductors
energy gap
germanium
Ge-Si alloys
photoluminescence
semiconductor epitaxial layers
semiconductor quantum wells
silicon
tensile strength
Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles
期刊论文
physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 195206
Shi LJ
;
Zhu LF
;
Zhao YH
;
Liu BG
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  |  
浏览/下载:217/56
  |  
提交时间:2010/03/08
ab initio calculations
aluminium compounds
annealing
band structure
chromium
Curie temperature
density functional theory
exchange interactions (electron)
ferromagnetic materials
III-V semiconductors
semimagnetic semiconductors
total energy
vacancies (crystal)
Uniaxial Strain Effects on Optical Properties of c-plane Wurtzite GaN
期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 11, 页码: 4139-4142
Hao, GD
;
Chen, YH
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  |  
浏览/下载:11/0
  |  
提交时间:2010/03/08
QUANTUM-WELL LASERS
DIODES
SAPPHIRE
Systematic investigation on the influence of the As-4 flux on the magnetic property of (In,Cr)As quantum dots
期刊论文
epl, 2008, 卷号: 84, 期号: 5, 页码: art. no. 58007
作者:
Tan PH
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  |  
浏览/下载:160/34
  |  
提交时间:2010/03/08
MOLECULAR-BEAM EPITAXY
FERROMAGNETISM
GROWTH
ARRAYS
Influence of V/III ratio on the structural and photoluminescence properties of In0.52AlAs/In0.53GaAs metamorphic high electron mobility transistor grown by molecular beam epitaxy
期刊论文
chinese physics b, 2008, 卷号: 17, 期号: 3, 页码: 1119-1123
Gao, HL
;
Zeng, YP
;
Wang, BQ
;
Zhu, ZP
;
Wang, ZG
收藏
  |  
浏览/下载:54/6
  |  
提交时间:2010/03/08
molecular beam epitaxy
semiconducting III-V materials
high electron mobility transistors
Low threshold lasing of GaN-based vertical cavity surface emitting lasers with an asymmetric coupled quantum well active region
期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 19, 页码: art. no. 191118
Zhang JY
;
Cai LE
;
Zhang BP
;
Li SQ
;
Lin F
;
Shang JZ
;
Wang DX
;
Lin KC
;
Yu JZ
;
Wang QM
收藏
  |  
浏览/下载:25/1
  |  
提交时间:2010/03/08
gallium compounds
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