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科研机构
半导体研究所 [14]
内容类型
期刊论文 [13]
会议论文 [1]
发表日期
2011 [1]
2009 [1]
2008 [1]
2004 [1]
2003 [2]
2002 [1]
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半导体物理 [14]
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Effect of built-in electric field in photovoltaic InAs quantum dot embedded GaAs solar cell
期刊论文
applied physics a-materials science & processing, 2011, 卷号: 103, 期号: 2, 页码: 335-341
作者:
He JF
;
Li MF
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  |  
浏览/下载:40/1
  |  
提交时间:2011/07/05
INTERMEDIATE-BAND
TRANSITIONS
Possible origin of ferromagnetism in undoped anatase TiO2
期刊论文
physical review b, 2009, 卷号: 79, 期号: 9, 页码: art. no. 092411
作者:
Li JB
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  |  
浏览/下载:72/34
  |  
提交时间:2010/03/08
ab initio calculations
ferromagnetic materials
magnetic moments
magnetic semiconductors
titanium compounds
vacancies (crystal)
Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles
期刊论文
physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 195206
Shi LJ
;
Zhu LF
;
Zhao YH
;
Liu BG
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  |  
浏览/下载:217/56
  |  
提交时间:2010/03/08
ab initio calculations
aluminium compounds
annealing
band structure
chromium
Curie temperature
density functional theory
exchange interactions (electron)
ferromagnetic materials
III-V semiconductors
semimagnetic semiconductors
total energy
vacancies (crystal)
Abnormal energy dependence of photoluminescence decay time in InGaN epilayer
期刊论文
chinese physics letters, 2004, 卷号: 21, 期号: 12, 页码: 2529-2532
Huang, JS
;
Luo, XD
;
Yang, XD
;
Sun, Z
;
Sun, BQ
;
Xu, ZY
;
Ge, WK
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  |  
浏览/下载:41/0
  |  
提交时间:2010/03/17
MULTIPLE-QUANTUM WELLS
Theoretical analysis of characteristics of GaxIn1-xNyAs1-y/GaAs quantum well lasers with different intermediate layers
期刊论文
chinese physics letters, 2003, 卷号: 20, 期号: 8, 页码: 1261-1263
作者:
Xu YQ
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  |  
浏览/下载:37/0
  |  
提交时间:2010/08/12
GAINNAS
LUMINESCENCE
DIODES
ALLOYS
Effect of different type intermediate layers on band structure and gain of Ga1-xInxNyAs1-y-GaAs quantum well lasers
期刊论文
ieee photonics technology letters, 2003, 卷号: 15, 期号: 10, 页码: 1336-1338
作者:
Xu YQ
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  |  
浏览/下载:395/1
  |  
提交时间:2010/08/12
band structure
differential gain
GaInNAs
optical gain
strain compensated
strain mediated
STRAIN
TEMPERATURE
DIODES
ALLOYS
OFFSET
Micro-Raman study on hydrogenated protocrystalline silicon films
期刊论文
acta physica sinica, 2002, 卷号: 51, 期号: 8, 页码: 1811-1815
Zhang SB
;
Liao XB
;
An L
;
Yang FH
;
Kong GL
;
Wang YQ
;
Xu YY
;
Chen CY
;
Diao HW
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  |  
浏览/下载:54/0
  |  
提交时间:2010/08/12
amorphous silicon
film
Raman scattering
microstructure
SI-H FILMS
MICROCRYSTALLINE SILICON
AMORPHOUS SI
LIGHT-SCATTERING
SPECTRA
Exciton states and optical spectra in CdSe nanocrystallite quantum dots
期刊论文
physical review b, 2000, 卷号: 61, 期号: 23, 页码: 15880-15886
作者:
Li JB
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  |  
浏览/下载:46/0
  |  
提交时间:2010/08/12
ELECTRONIC-STRUCTURE
SEMICONDUCTOR CLUSTERS
SIZE DEPENDENCE
ENERGY-LEVELS
CRYSTALLITES
ASSIGNMENT
WURTZITE
SPHERES
BANDS
DARK
High-field cyclotron resonance and electron-phonon interaction in modulation-doped multiple quantum well structures
会议论文
13th international conference on high magnetic fields in semiconductor physics, nijmegen, netherlands, aug 10-14, 1998
Wang YJ
;
Jiang ZX
;
McCombe BD
;
Peeters FM
;
Wu XG
;
Hai GQ
;
Eustis TJ
;
Schaff W
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2010/11/15
cyclotron resonance
electron-phonon interaction
electron-electron interaction
high magnetic fields
EXCHANGE ENHANCEMENT
GAAS
HETEROSTRUCTURES
GAS
LIMIT
HETEROJUNCTIONS
POLARONS
MODES
LEVEL
Wurtzite GaN epitaxial growth on a Si(001) substrate using gamma-Al2O3 as an intermediate layer
期刊论文
applied physics letters, 1998, 卷号: 72, 期号: 1, 页码: 109-111
Wang LS
;
Liu XL
;
Zan YD
;
Wang J
;
Wang D
;
Lu DC
;
Wang ZG
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2010/08/12
SINGLE CRYSTALLINE GAN
LIGHT-EMITTING-DIODES
VAPOR-PHASE EPITAXY
THIN-FILMS
GALLIUM NITRIDE
001 SILICON
SAPPHIRE
SI
DEPOSITION
ALN
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