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Effect of built-in electric field in photovoltaic InAs quantum dot embedded GaAs solar cell 期刊论文
applied physics a-materials science & processing, 2011, 卷号: 103, 期号: 2, 页码: 335-341
作者:  He JF;  Li MF
收藏  |  浏览/下载:40/1  |  提交时间:2011/07/05
Possible origin of ferromagnetism in undoped anatase TiO2 期刊论文
physical review b, 2009, 卷号: 79, 期号: 9, 页码: art. no. 092411
作者:  Li JB
收藏  |  浏览/下载:72/34  |  提交时间:2010/03/08
Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles 期刊论文
physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 195206
Shi LJ; Zhu LF; Zhao YH; Liu BG
收藏  |  浏览/下载:217/56  |  提交时间:2010/03/08
Abnormal energy dependence of photoluminescence decay time in InGaN epilayer 期刊论文
chinese physics letters, 2004, 卷号: 21, 期号: 12, 页码: 2529-2532
Huang, JS; Luo, XD; Yang, XD; Sun, Z; Sun, BQ; Xu, ZY; Ge, WK
收藏  |  浏览/下载:41/0  |  提交时间:2010/03/17
Theoretical analysis of characteristics of GaxIn1-xNyAs1-y/GaAs quantum well lasers with different intermediate layers 期刊论文
chinese physics letters, 2003, 卷号: 20, 期号: 8, 页码: 1261-1263
作者:  Xu YQ
收藏  |  浏览/下载:37/0  |  提交时间:2010/08/12
Effect of different type intermediate layers on band structure and gain of Ga1-xInxNyAs1-y-GaAs quantum well lasers 期刊论文
ieee photonics technology letters, 2003, 卷号: 15, 期号: 10, 页码: 1336-1338
作者:  Xu YQ
收藏  |  浏览/下载:395/1  |  提交时间:2010/08/12
Micro-Raman study on hydrogenated protocrystalline silicon films 期刊论文
acta physica sinica, 2002, 卷号: 51, 期号: 8, 页码: 1811-1815
Zhang SB; Liao XB; An L; Yang FH; Kong GL; Wang YQ; Xu YY; Chen CY; Diao HW
收藏  |  浏览/下载:54/0  |  提交时间:2010/08/12
Exciton states and optical spectra in CdSe nanocrystallite quantum dots 期刊论文
physical review b, 2000, 卷号: 61, 期号: 23, 页码: 15880-15886
作者:  Li JB
收藏  |  浏览/下载:46/0  |  提交时间:2010/08/12
High-field cyclotron resonance and electron-phonon interaction in modulation-doped multiple quantum well structures 会议论文
13th international conference on high magnetic fields in semiconductor physics, nijmegen, netherlands, aug 10-14, 1998
Wang YJ; Jiang ZX; McCombe BD; Peeters FM; Wu XG; Hai GQ; Eustis TJ; Schaff W
收藏  |  浏览/下载:15/0  |  提交时间:2010/11/15
Wurtzite GaN epitaxial growth on a Si(001) substrate using gamma-Al2O3 as an intermediate layer 期刊论文
applied physics letters, 1998, 卷号: 72, 期号: 1, 页码: 109-111
Wang LS; Liu XL; Zan YD; Wang J; Wang D; Lu DC; Wang ZG
收藏  |  浏览/下载:32/0  |  提交时间:2010/08/12


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