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科研机构
半导体研究所 [63]
内容类型
期刊论文 [56]
会议论文 [7]
发表日期
2011 [2]
2009 [1]
2008 [6]
2007 [2]
2006 [6]
2005 [2]
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半导体物理 [63]
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Strong up-conversion emissions in ZnO:Er3+, ZnO:Er3+-Yb3+ nanoparticles and their surface modified counterparts
期刊论文
journal of colloid and interface science, 2011, 卷号: 358, 期号: 2, 页码: 334-337
作者:
Li JB
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浏览/下载:54/5
  |  
提交时间:2011/07/05
Sol-gel
ZnO:Er-Yb nanoparticles
Up-conversion
Core/shell
Three-photon processes
NANOCRYSTALLINE YTTRIA
OPTICAL SPECTROSCOPY
GLASSES
LUMINESCENCE
TEMPERATURE
ER3+
YB3+
GREEN
FILMS
OXIDE
Study on Optical Properties of Type-II SnO2/ZnS Core/Shell Nanowires
期刊论文
journal of physical chemistry c, 2011, 卷号: 115, 期号: 15, 页码: 7225-7229
作者:
Li JB
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浏览/下载:37/2
  |  
提交时间:2011/07/05
COLLOIDAL NANOCRYSTAL HETEROSTRUCTURES
PHOTOLUMINESCENCE PROPERTIES
LATTICE DYNAMICS
TIN OXIDE
FILMS
NANOSTRUCTURES
SPECTRA
EXCITON
ARRAYS
RUTILE
Efficient hole transport in asymmetric coupled InGaN multiple quantum wells
期刊论文
applied physics letters, 2009, 卷号: 95, 期号: 16, 页码: art.no.161110
Zhang JY (Zhang Jiang-Yong)
;
Cai LE (Cai Li-E)
;
Zhang BP (Zhang Bao-Ping)
;
Hu XL (Hu Xiao-Long)
;
Jiang F (Jiang Fang)
;
Yu JZ (Yu Jin-Zhong)
;
Wang QM (Wang Qi-Ming)
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  |  
浏览/下载:142/33
  |  
提交时间:2010/03/08
Enhanced electroluminescence intensity of InGaN/GaN multi-quantum-wells based on Mg-doped GaN annealed in O-2
期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 10, 页码: art. no. 102112
Ma, P
;
Gai, YQ
;
Wang, JX
;
Yang, FH
;
Zeng, YP
;
Li, JM
;
Li, JB
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  |  
浏览/下载:24/0
  |  
提交时间:2010/03/08
P-TYPE GAN
MOLECULAR-BEAM EPITAXY
AUGMENTED-WAVE METHOD
VAPOR-PHASE EPITAXY
ELECTRICAL-PROPERTIES
OXYGEN
ACTIVATION
SILICON
Photoluminescence properties of tensile-strained GaAsP/GaInP single quantum wells grown by metal organic chemical vapor deposition
期刊论文
japanese journal of applied physics, 2008, 卷号: 47, 期号: 9, 页码: 7026-7031 part 1
Zhong, L
;
Ma, XY
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浏览/下载:55/0
  |  
提交时间:2010/03/08
tensile strain
GaAsP/GaInP
photoluminescence
quantum well
laser diodes
LP-MOCVD
Oxygen pressure dependences of structure and properties of ZnO films deposited on amorphous glass substrates by pulsed laser deposition
期刊论文
japanese journal of applied physics, 2008, 卷号: 47, 期号: 4, 页码: 2225-2229 part 1
Zhu, BL
;
Zhao, XZ
;
Xu, S
;
Su, FH
;
Li, GH
;
Wu, XG
;
Wu, J
;
Wu, R
;
Liu, J
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  |  
浏览/下载:42/2
  |  
提交时间:2010/03/08
laser ablation
zinc oxide
deposition process
optical properties
electrical properties and measurements
High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth
期刊论文
chinese physics b, 2008, 卷号: 17, 期号: 1, 页码: 323-327
She-Song, H
;
Zhi-Chuan, N
;
Feng, Z
;
Hai-Qiao, N
;
Huan, Z
;
Dong-Hai, W
;
Zheng, S
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  |  
浏览/下载:42/3
  |  
提交时间:2010/03/08
molecular beam epitaxy
quantum dots
a modified two-step growth
Photoluminescence and lasing properties of InAs/GaAs quantum dots grown by metal-organic chemical vapour deposition
期刊论文
chinese physics b, 2008, 卷号: 17, 期号: 11, 页码: 4300-4304
作者:
Liang S
;
Pan JQ
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  |  
浏览/下载:57/0
  |  
提交时间:2010/03/08
metal-organic chemical vapour deposition
Effect of Interface Roughness and Dislocation Density on Electroluminescence Intensity of InGaN Multiple Quantum Wells
期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 11, 页码: 4143-4146
Zhao, DG
;
Jiang, DS
;
Zhu, JJ
;
Liu, ZS
;
Zhang, SM
;
Wang, YT
;
Yang, H
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2010/03/08
X-RAY-DIFFRACTION
EPITAXIAL GAN
DEPENDENCE
PHOTOLUMINESCENCE
GROWTH
FILMS
Plasmonic surface-wave splitter
期刊论文
applied physics letters, 2007, 卷号: 90, 期号: 16, 页码: art.no.161130
Gan QQ (Gan, Qiaoqiang)
;
Guo BS (Guo, Baoshan)
;
Song GF (Song, Guofeng)
;
Chen LG (Chen, Lianghui)
;
Fu Z (Fu, Zhan)
;
Ding YJ (Ding, Yujie J.)
;
Bartoli FJ (Bartoli, Filbert J.)
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  |  
浏览/下载:43/0
  |  
提交时间:2010/03/29
SUBWAVELENGTH APERTURE
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