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科研机构
半导体研究所 [36]
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期刊论文 [35]
会议论文 [1]
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2014 [1]
2013 [2]
2012 [1]
2011 [1]
2010 [2]
2009 [6]
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半导体物理 [36]
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Investigation of high hole mobility In0.41Ga0.59Sb/Al0.91Ga0.09Sb quantum well structures grown by molecular beam epitaxy
期刊论文
applied physics letters, 2014, 卷号: 104, 期号: 5, 页码: 052111
Wang, J
;
Xing, JL
;
Xiang, W
;
Wang, GW
;
Xu, YQ
;
Ren, ZW
;
Niu, ZC
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浏览/下载:24/0
  |  
提交时间:2015/03/19
Molecular beam epitaxy growth of high electron mobility InAs AlSb deep
期刊论文
journal of applied physics, 2013, 卷号: 114, 期号: 1, 页码: 013704
Juan Wang, Guo-Wei Wang, Ying-Qiang Xu, Jun-Liang Xing, Wei Xiang, Bao Tang, Yan Zhu, Zheng-Wei Ren, Zhen-Hong He, Zhi-Chuan Niu
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浏览/下载:25/0
  |  
提交时间:2014/03/26
Extraction of terahertz emission from a grating-coupled high-electron-mobility transistor
期刊论文
journal of semiconductors, 2013, 卷号: 34, 期号: 2, 页码: 022002
Yu, Zhou
;
Xinxing, Li
;
Renbing, Tan
;
Wei, Xue
;
Yongdan, Huang
;
Shitao, Lou
;
Baoshun, Zhang
;
Hua, Qin
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  |  
浏览/下载:16/0
  |  
提交时间:2014/05/08
Polarization-induced remote interfacial charge scattering in Al2O3/AlGaN/GaN double heterojunction high electron mobility transistors
期刊论文
applied physics letters, 2012, 卷号: 100, 期号: 13, 页码: 132105
Ji, D
;
Liu, B
;
Lu, YW
;
Liu, GP
;
Zhu, QS
;
Wang, ZG
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浏览/下载:11/0
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提交时间:2013/03/20
Fabrication and characterization of high performance AlGaN/GaN HEMTs on sapphire with silicon nitride passivation
期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 6, 页码: 64001
Zhang, Renping
;
Yan, Wei
;
Wang, Xiaoliang
;
Yang, Fuhua
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浏览/下载:28/0
  |  
提交时间:2012/06/14
Aspect ratio
Current density
Drain current
Electric network analysis
Electric network analyzers
Electron mobility
Fabrication
Gallium nitride
Ohmic contacts
Passivation
Silicon nitride
Silicon wafers
Resonant subband Landau level coupling in symmetric quantum well
期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 8, 页码: art. no. 083502
Tung LC (Tung L. -C.)
;
Wu XG (Wu X. -G.)
;
Pfeiffer LN (Pfeiffer L. N.)
;
West KW (West K. W.)
;
Wang YJ (Wang Y. -J.)
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浏览/下载:29/0
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提交时间:2010/12/05
TILTED MAGNETIC-FIELDS
ELECTRON-GAS
DEPOLARIZATION SHIFT
CYCLOTRON-RESONANCE
MATRIX-ELEMENTS
HETEROJUNCTIONS
SPECTROSCOPY
TECHNOLOGY
ABSORPTION
SYSTEMS
STUDY ON MICROWAVE CYCLOTRON RESONANCE OF HIGH-MOBILITY GaAs/Al-0.35 Ga-0.65 As TWO-DIMENSIONAL ELECTRON GAS
期刊论文
journal of infrared and millimeter waves, 2010, 卷号: 29, 期号: 2, 页码: 87-
Yang W (Yang Wei)
;
Luo HH (Luo Hai-Hui)
;
Qian X (Qian Xuan)
;
Ji Y (Ji Yang)
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浏览/下载:77/0
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提交时间:2010/05/24
microwave
reflectance
two-dimensional electron gas(2DEG)
cyclotron resonance
QUANTUM-WELLS
GAAS/ALGAAS HETEROSTRUCTURES
GERMANIUM
SILICON
Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure
期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: art. no. 017301
Guo LC
;
Wang XL
;
Xiao HL
;
Ran JX
;
Wang CM
;
Ma ZY
;
Luo WJ
;
Wang ZG
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  |  
浏览/下载:193/43
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提交时间:2010/03/08
CONTENT ALGAN/GAN HETEROSTRUCTURES
CHEMICAL-VAPOR-DEPOSITION
FIELD-EFFECT TRANSISTORS
AL-CONTENT
ALGAN/ALN/GAN HETEROSTRUCTURES
HEMT STRUCTURES
PHASE EPITAXY
SAPPHIRE
GAS
DENSITIES
Deep levels in high resistivity GaN detected by thermally stimulated luminescence and first-principles calculations
期刊论文
journal of physics d-applied physics, 2009, 卷号: 42, 期号: 15, 页码: art. no. 155403
作者:
Li JB
;
Hou QF
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浏览/下载:65/11
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提交时间:2010/03/08
N-TYPE GAN
ELECTRON-MOBILITY TRANSISTORS
VAPOR-PHASE EPITAXY
DEFECTS
THERMOLUMINESCENCE
CARBON
TRAP
Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 5, 页码: art. no. 052101
作者:
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浏览/下载:235/41
  |  
提交时间:2010/03/08
aluminium compounds
conduction bands
energy gap
high electron mobility transistors
III-V semiconductors
magnesium compounds
passivation
semiconductor heterojunctions
valence bands
wide band gap semiconductors
X-ray photoelectron spectra
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