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科研机构
半导体研究所 [135]
内容类型
期刊论文 [128]
会议论文 [7]
发表日期
2011 [8]
2010 [12]
2009 [17]
2008 [18]
2007 [4]
2006 [9]
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半导体物理 [135]
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Influence of indium cluster on the high and constant background electron density in ternary InxGa1-xN alloys
期刊论文
li c (li, chong); wu fm (wu, fengmin); li ss (li, shu-shen); xia jb (xia, jian-bai); li jb (li, jingbo), 2012, 卷号: 101, 期号: 6, 页码: 062102
Li C (Li, Chong)
;
Wu FM (Wu, Fengmin)
;
Li SS (Li, Shu-Shen)
;
Xia JB (Xia, Jian-Bai)
;
Li JB (Li, Jingbo)
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2013/04/02
Detection of large in-plane spin-dephasing anisotropy in [100]-grown GaAs/AlGaAs quantum wells
期刊论文
physica e-low-dimensional systems & nanostructures, 2011, 卷号: 43, 期号: 5, 页码: 1127-1130
作者:
Zhang XH
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  |  
浏览/下载:47/3
  |  
提交时间:2011/07/05
ZINCBLENDE HETEROSTRUCTURES
RELAXATION ANISOTROPY
SYSTEMS
SPINTRONICS
DYNAMICS
Fabrication and characterization of high performance AlGaN/GaN HEMTs on sapphire with silicon nitride passivation
期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 6, 页码: 64001
Zhang, Renping
;
Yan, Wei
;
Wang, Xiaoliang
;
Yang, Fuhua
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  |  
浏览/下载:28/0
  |  
提交时间:2012/06/14
Aspect ratio
Current density
Drain current
Electric network analysis
Electric network analyzers
Electron mobility
Fabrication
Gallium nitride
Ohmic contacts
Passivation
Silicon nitride
Silicon wafers
Temperature and electron density dependence of spin relaxation in GaAs/AlGaAs quantum well
期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.84
Han LF
;
Zhu YG
;
Zhang XH
;
Tan PH
;
Ni HQ
;
Niu ZC
收藏
  |  
浏览/下载:46/2
  |  
提交时间:2011/07/05
ROOM-TEMPERATURE
Effect of built-in electric field in photovoltaic InAs quantum dot embedded GaAs solar cell
期刊论文
applied physics a-materials science & processing, 2011, 卷号: 103, 期号: 2, 页码: 335-341
作者:
He JF
;
Li MF
收藏
  |  
浏览/下载:40/1
  |  
提交时间:2011/07/05
INTERMEDIATE-BAND
TRANSITIONS
The explanation of InN bandgap discrepancy based on experiments and first-principle calculations
期刊论文
physics letters a, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155
作者:
Li JB
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浏览/下载:59/6
  |  
提交时间:2011/07/05
First principle calculation
Indium nitride
Band gap
Defect
INITIO MOLECULAR-DYNAMICS
AUGMENTED-WAVE METHOD
INDIUM NITRIDE
GAP
PSEUDOPOTENTIALS
SEMICONDUCTORS
IMPURITIES
ABSORPTION
DEFECTS
ALLOYS
Quantum mechanical simulation of electronic transport in nanostructured devices by efficient self-consistent pseudopotential calculation
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.54503
作者:
Jiang XW
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浏览/下载:50/2
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提交时间:2011/07/05
FIELD-EFFECT TRANSISTORS
SEMICONDUCTOR-DEVICES
SILICON DEVICES
MONTE-CARLO
MOSFETS
NANOTRANSISTORS
APPROXIMATION
EQUATIONS
DESIGN
MODELS
Helical Quantum States in HgTe Quantum Dots with Inverted Band Structures
期刊论文
physical review letters, 2011, 卷号: 106, 期号: 20, 页码: article no.206802
作者:
Lou WK
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  |  
浏览/下载:54/2
  |  
提交时间:2011/07/05
TOPOLOGICAL INSULATORS
WELLS
PHASE
SPINS
Native p-type transparent conductive CuI via intrinsic defects
期刊论文
journal of applied physics, 2011, 卷号: 110, 期号: 5, 页码: 54907
Wang J
;
Li JB
;
Li SS
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  |  
浏览/下载:35/0
  |  
提交时间:2012/01/06
HYBRID ELECTROCHEMICAL/CHEMICAL SYNTHESIS
AUGMENTED-WAVE METHOD
COPPER HALIDES
BAND-STRUCTURE
II-VI
SEMICONDUCTORS
EMISSION
DIAMOND
CUBR
CUCL
First-principles study of UC2 and U2C3
期刊论文
journal of nuclear materials, 2010, 卷号: 396, 期号: 2-3, 页码: 218-222
Shi HL (Shi Hongliang)
;
Zhang P (Zhang Ping)
;
Li SS (Li Shu-Shen)
;
Wang BT (Wang Baotian)
;
Sun B (Sun Bo)
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  |  
浏览/下载:78/12
  |  
提交时间:2010/04/21
First-principle calculation
GGA plus U
Elastic constants
Chemical bonding
Valence state
BRILLOUIN-ZONE INTEGRATIONS
CARBIDES
SPECTRA
METALS
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