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科研机构
半导体研究所 [15]
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期刊论文 [14]
会议论文 [1]
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2010 [1]
2009 [1]
2006 [1]
2002 [1]
2001 [3]
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半导体物理 [15]
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First-principles study of ground-state properties and high pressure behavior of ThO2
期刊论文
journal of nuclear materials, 2010, 卷号: 399, 期号: 2-3, 页码: 181-188
Wang BT (Wang Bao-Tian)
;
Shi HL (Shi Hongliang)
;
Li WD (Li Wei-Dong)
;
Zhang P (Zhang Ping)
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  |  
浏览/下载:34/0
  |  
提交时间:2010/06/18
ELASTIC PROPERTIES
ACTINIDE DIOXIDES
THORIUM-DIOXIDE
SINGLE-CRYSTAL
STABILITY
Magnetic coupling properties of rare-earth metals (Gd, Nd) doped ZnO: First-principles calculations
期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 2, 页码: art. no. 023910
Shi HL
;
Zhang P
;
Li SS
;
Xia JB
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  |  
浏览/下载:107/25
  |  
提交时间:2010/03/08
FERROMAGNETIC SEMICONDUCTOR
BAND-STRUCTURE
STABILIZATION
INJECTION
A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor
期刊论文
chinese physics, 2006, 卷号: 15, 期号: 10, 页码: 2422-2426
Ma L (Ma Long)
;
Huang YL (Huang Ying-Long)
;
Zhang Y (Zhang Yang)
;
Yang FH (Yang Fu-Hua)
;
Wang LC (Wang Liang-Chen)
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  |  
浏览/下载:24/0
  |  
提交时间:2010/04/11
resonant tunnelling diode (RTD)
high electron mobility transistor (HEMT)
molecular beam epitaxy (MBE)
bistability
self-latching
Thermal annealing behaviour of Ni/Au on n-GaN Schottky contacts
期刊论文
journal of physics d-applied physics, 2002, 卷号: 35, 期号: 20, 页码: 2648-2651
作者:
Zhang SM
;
Zhao DG
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  |  
浏览/下载:59/0
  |  
提交时间:2010/08/12
RESISTANCE OHMIC CONTACTS
FIELD-EFFECT TRANSISTOR
SINGLE-CRYSTAL GAN
MICROWAVE PERFORMANCE
STABILITY
BARRIER
DIODES
Surface roughness and high density of cubic twins and hexagonal inclusions in cubic GaN epilayers
期刊论文
science in china series a-mathematics physics astronomy, 2001, 卷号: 44, 期号: 6, 页码: 796-800
Qu B
;
Li SF
;
Hu GX
;
Zheng XH
;
Wang YT
;
Lin SM
;
Yang H
;
Liang JW
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  |  
浏览/下载:88/3
  |  
提交时间:2010/08/12
GaN
polarity
surface roughness
FILMS
STABILITY
GROWTH
Multiplicity factor and diffraction geometry factor for single crystal X-ray diffraction analysis and measurement of phase content in cubic GaN/GaAs(001) epilayers
期刊论文
science in china series a-mathematics physics astronomy, 2001, 卷号: 44, 期号: 4, 页码: 497-503
Qu B
;
Zheng XH
;
Wang YT
;
Feng ZH
;
Han JY
;
Liu S
;
Lin SM
;
Yang H
;
Liang JW
收藏
  |  
浏览/下载:106/6
  |  
提交时间:2010/08/12
four-circle diffraction
GaN
phase content
MOLECULAR-BEAM EPITAXY
GAN FILMS
GROWTH
STABILITY
RATIO
Gap states of hydrogenated amorphous silicon near and above the threshold of microcrystallinity with subtle boron compensation
期刊论文
applied physics letters, 2001, 卷号: 78, 期号: 17, 页码: 2509-2511
Sheng SR
;
Liao XB
;
Kong GL
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  |  
浏览/下载:103/17
  |  
提交时间:2010/08/12
CONSTANT PHOTOCURRENT METHOD
A-SI-H
ABSORPTION
FILMS
SPECTROSCOPY
DEPOSITION
STABILITY
DILUTION
A comparison of photoluminescence properties of InGaAs GaAs quantum dots with a single quantum well
期刊论文
journal of applied physics, 1999, 卷号: 86, 期号: 3, 页码: 1456-1459
Kong MY
;
Wang XL
;
Pan D
;
Zeng YP
;
Wang J
;
Ge WK
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  |  
浏览/下载:48/0
  |  
提交时间:2010/08/12
OPTICAL-PROPERTIES
CARRIER RELAXATION
THERMAL-ACTIVATION
LOCALIZED EXCITONS
SUPERLATTICES
MULTILAYERS
STABILITY
ISLANDS
GROWTH
Stability improvement of selective oxidation during the fabrication of InGaAs/GaAs vertical cavity surface emitting laser
期刊论文
japanese journal of applied physics part 1-regular papers short notes & review papers, 1998, 卷号: 37, 期号: 6b, 页码: 3673-3675
Pan Z
;
Zhang Y
;
Du Y
;
Wu RH
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  |  
浏览/下载:32/0
  |  
提交时间:2010/08/12
VCSEL
selective oxidation
stability
MICROSTRUCTURE
WET OXIDATION
Stability improvement of selective oxidation during the fabrication of InGaAs/GaAs vertical cavity surface emitting laser
会议论文
6th microoptics conference / 14th topical meeting on gradient-index optical systems (moc/grin 97), tokyo, japan, oct 07-09, 1997
Pan Z
;
Zhang Y
;
Du Y
;
Wu RH
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  |  
浏览/下载:11/0
  |  
提交时间:2010/11/15
VCSEL
selective oxidation
stability
WET OXIDATION
MICROSTRUCTURE
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