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Confinement factor and absorption loss of AlInGaN based laser diodes emitting from ultraviolet to green 期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 2, 页码: art. no. 023104
作者:  Zhu JJ;  Zhang SM;  Jiang DS;  Zhao DG;  Yang H
收藏  |  浏览/下载:191/56  |  提交时间:2010/03/08
Role of interface dipole in metal gate/high-k effective work function modulation by aluminum incorporation 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 25, 页码: art. no. 252905
作者:  Zhang XW
收藏  |  浏览/下载:58/0  |  提交时间:2010/03/08
Microstructure and Optical Properties of Nonpolar m-Plane GaN Films Grown on m-Plane Sapphire by Hydride Vapor Phase Epitaxy 期刊论文
japanese journal of applied physics, 2008, 卷号: 47, 期号: 5, 页码: 3346-3349 part 1
Wei, TB; Duan, RF; Wang, JX; Li, JM; Huo, ZQ; Yang, JK; Zeng, YP
收藏  |  浏览/下载:24/0  |  提交时间:2010/03/08
Stress analysis of ZnO film with a GaN buffer layer on sapphire substrate 期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 6, 页码: 2277-2280
Cui, JP; Wang, XF; Duan, Y; He, JX; Zeng, YP
收藏  |  浏览/下载:61/0  |  提交时间:2010/03/08
Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire 期刊论文
applied physics letters, 2003, 卷号: 83, 期号: 4, 页码: 677-679
作者:  Zhao DG
收藏  |  浏览/下载:1038/2  |  提交时间:2010/08/12
Optimization of cubic GaN growth by metalorganic chemical vapor deposition based on residual strain relaxation 期刊论文
applied physics letters, 2003, 卷号: 82, 期号: 2, 页码: 206-208
Feng ZH; Yang H; Zheng XH; Fu Y; Sun YP; Shen XM; Wang YT
收藏  |  浏览/下载:21/0  |  提交时间:2010/08/12
Heteroepitaxial growth and annealing of gamma-Al2O3 thin films on silicon 期刊论文
international journal of modern physics b, 2002, 卷号: 16, 期号: 28-29, 页码: 4302-4305
Tan LW; Wang J; Wang QY; Yu YH; Lin LY
收藏  |  浏览/下载:55/0  |  提交时间:2010/08/12
Fine structure of the plasmon resonance absorption peak of Ag nanoparticles embedded in partially oxidized Si matrix 期刊论文
applied physics letters, 2001, 卷号: 78, 期号: 1, 页码: 102-104
Yang L; Li GH; Zhang JG; Zhang LD; Liu YL; Wang QM
收藏  |  浏览/下载:44/0  |  提交时间:2010/08/12


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