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CORC

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Enhanced electroluminescence intensity of InGaN/GaN multi-quantum-wells based on Mg-doped GaN annealed in O-2 期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 10, 页码: art. no. 102112
Ma, P; Gai, YQ; Wang, JX; Yang, FH; Zeng, YP; Li, JM; Li, JB
收藏  |  浏览/下载：25/0  |  提交时间：2010/03/08
Neutron irradiation effect in two-dimensional electron gas of AlGaN/GaN heterostructures 期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 3, 页码: 1045-1048
Zhang, ML; Wang, XL; Xiao, HL; Wang, CM; Ran, JX; Hu, GX
收藏  |  浏览/下载：52/3  |  提交时间：2010/03/08
Thermally induced Fe atom transition from substitutional to interstitial sites in InP and its influence on material property 期刊论文
acta physica sinica, 2007, 卷号: 56, 期号: 9, 页码: 5536-5541
Zhao, YW (Zhao You-Wen); Miao, SS (Miao Shan-Shan); Dong, ZY (Dong Zhi-Yuan); Lue, XH (Lue Xiao-Hong); Deng, AH (Deng Ai-Hong); Yang, J (Yang Jun); Wang, B (Wang Bo)
收藏  |  浏览/下载：35/0  |  提交时间：2010/03/29
Photoluminescence study of InGaN/GaN quantum dots grown on passivated GaN surface 期刊论文
journal of crystal growth, 2004, 卷号: 260, 期号: 1-2, 页码: 13-17
Huang JS; Chen Z; Luo XD; Xu ZY; Ge WK
收藏  |  浏览/下载：136/15  |  提交时间：2010/03/09
Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys 期刊论文
applied physics letters, 2001, 卷号: 79, 期号: 12, 页码: 1810-1812
Li Q; Xu SJ; Cheng WC; Xie MH; Tong SY; Che CM; Yang H
收藏  |  浏览/下载：79/7  |  提交时间：2010/08/12
Effects of rapid thermal annealing on the optical properties of GaNxAs1-x/GaAs single quantum well structure grown by molecular beam epitaxy 期刊论文
journal of applied physics, 2000, 卷号: 87, 期号: 1, 页码: 245-248
Li LH; Pan Z; Zhang W; Lin YW; Zhou ZQ; Wu RH
收藏  |  浏览/下载：55/0  |  提交时间：2010/08/12
Exciton dynamics in self-organized InAs/GaAs quantum dots 期刊论文
acta physica sinica, 1999, 卷号: 48, 期号: 4, 页码: 744-750
Lu ZD; Li Q; Xu JZ; Zheng BZ; Xu ZY; Ge WK
收藏  |  浏览/下载：34/0  |  提交时间：2010/08/12

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