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The bipolar doping of ZnS via native defects and external dopants 期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 11, 页码: art. no. 113704
作者:  Li JB
收藏  |  浏览/下载：132/30  |  提交时间：2010/03/08
MOCVD growth of InN using a GaN buffer 期刊论文
superlattices and microstructures, 2008, 卷号: 43, 期号: 2, 页码: 81-85
作者:  Yang H;  Wang LL;  Wang H;  Yang H;  Zhu JJ
收藏  |  浏览/下载：52/1  |  提交时间：2010/03/08
Influence of deep level defects on electrical compensation in semi-insulating InP materials 期刊论文
acta physica sinica, 2007, 卷号: 56, 期号: 2, 页码: 1167-1171
Yang, J (Yang Jun); Zhao, YW (Zhao You-Wen); Dong, ZY (Dong Zhi-Yuan); Deng, AH (Deng Ai-Hong); Miao, SS (Miao Shan-Shan); Wang, B (Wang Bo)
收藏  |  浏览/下载：31/0  |  提交时间：2010/03/29
InP  
Thermally induced Fe atom transition from substitutional to interstitial sites in InP and its influence on material property 期刊论文
acta physica sinica, 2007, 卷号: 56, 期号: 9, 页码: 5536-5541
Zhao, YW (Zhao You-Wen); Miao, SS (Miao Shan-Shan); Dong, ZY (Dong Zhi-Yuan); Lue, XH (Lue Xiao-Hong); Deng, AH (Deng Ai-Hong); Yang, J (Yang Jun); Wang, B (Wang Bo)
收藏  |  浏览/下载：35/0  |  提交时间：2010/03/29
1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy 会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Niu, ZC; Zhang, SY; Ni, HQ; Wu, DH; He, ZH; Sun, Z; Han, Q; Wu, RG
收藏  |  浏览/下载：224/60  |  提交时间：2010/03/29
High structural and optical quality 1.3 mu m GaInNAs/GaAs quantum wells with higher indium content grown by molecular-beam expitaxy 期刊论文
applied physics letters, 2005, 卷号: 87, 期号: 16, 页码: art.no.161911
Zhang SY; Niu ZC; Ni HQ; Wu DH; He ZH; Sun Z; Han Q; Wu RH
收藏  |  浏览/下载：106/35  |  提交时间：2010/03/17
Structural and optical properties of strain-compensated GaAsSb/GaAs quantum wells with high Sb composition 期刊论文
applied physics letters, 2003, 卷号: 83, 期号: 20, 页码: 4149-4151
作者:  Jiang DS;  Zhang YH
收藏  |  浏览/下载：183/0  |  提交时间：2010/08/12
Positron-annihilation study of compensation defects in InP 期刊论文
journal of applied physics, 2002, 卷号: 91, 期号: 4, 页码: 1998-2001
Shan YY; Deng AH; Ling CC; Fung S; Ling CD; Zhao YW; Sun TN; Sun NF
收藏  |  浏览/下载：99/9  |  提交时间：2010/08/12
Residual donors and compensation in metalorganic chemical vapor deposition as-grown n-GaN 期刊论文
journal of applied physics, 2001, 卷号: 90, 期号: 12, 页码: 6130-6134
Xu XL; Liu HT; Shi CS; Zhao YW; Fung S; Beling CD
收藏  |  浏览/下载：127/15  |  提交时间：2010/08/12
Effect of arsenic precipitates on Fermi level in GaAs grown by molecular-beam epitaxy at low temperature 期刊论文
journal of applied physics, 2000, 卷号: 87, 期号: 6, 页码: 2923-2925
Chen YH; Wang ZG; Yang Z
收藏  |  浏览/下载：62/0  |  提交时间：2010/08/12

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