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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Quantum Mechanical Study on Tunnelling and Ballistic Transport of Nanometer Si MOSFETs 期刊论文 chinese physics letters, 2010, 卷号: 27, 期号: 5, 页码: art. no. 057101 Deng HX (Deng Hui-Xiong); Jiang XW (Jiang Xiang-Wei); Tang LM (Tang Li-Ming) 收藏  |  浏览/下载：101/3  |  提交时间：2010/05/24 SIMULATION  TRANSISTORS  LIMIT  NM   Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure 期刊论文 chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: art. no. 017301 Guo LC; Wang XL; Xiao HL; Ran JX; Wang CM; Ma ZY; Luo WJ; Wang ZG 收藏  |  浏览/下载：193/43  |  提交时间：2010/03/08 CONTENT ALGAN/GAN HETEROSTRUCTURES  CHEMICAL-VAPOR-DEPOSITION  FIELD-EFFECT TRANSISTORS  AL-CONTENT  ALGAN/ALN/GAN HETEROSTRUCTURES  HEMT STRUCTURES  PHASE EPITAXY  SAPPHIRE  GAS  DENSITIES   The influence of Schottky contact metals on the strain of AlGaN barrier layers 期刊论文 journal of applied physics, 2008, 卷号: 103, 期号: 4, 页码: art. no. 044503 Lin, ZJ; Zhao, JZ; Corrigan, TD; Wang, Z; You, ZD; Wang, ZG; Lu, W 收藏  |  浏览/下载：51/2  |  提交时间：2010/03/08 PIEZOELECTRIC POLARIZATION  HETEROSTRUCTURES   Multiple valley couplings in nanometer Si metal-oxide-semiconductor field-effect transistors 期刊论文 journal of applied physics, 2008, 卷号: 103, 期号: 12, 页码: art. no. 124507 Deng, HX; Jiang, XW; Luo, JW; Li, SS; Xia, JB; Wang, LW 收藏  |  浏览/下载：65/5  |  提交时间：2010/03/08 SIMULATION  MOSFETS  SUPERLATTICES  REGIME  LIMIT   Observations on subband electron properties in In0.65Ga0.35As/In0.52Al0.48As MM-HEMT with Si delta-doped on the barriers 期刊论文 acta physica sinica, 2007, 卷号: 56, 期号: 7, 页码: 4143-4147 Zhou WZ (Zhou Wen-Zheng); Lin T (Lin Tie); Shang LY (Shang Li-Yan); Huang ZM (Huang Zhi-Ming); Zhu B (Zhu Bo); Cui LJ (Cui Li-Jie); Gao HL (Gao Hong-Ling); Li DL (Li Dong-Lin); Guo SL (Guo Shao-Ling); Gui YS (Gui Yong-Sheng); Chu JH (Chu Jun-Hao) 收藏  |  浏览/下载：139/0  |  提交时间：2010/03/29 SdH oscillation   Two-dimensional numerical simulation of the channel electron in an In0.52Al0.48As/In0.53Ga0.48As HEMT 会议论文 1997 ieee hong kong electron devices meeting, hong kong, hong kong, 35672 Zhang XH; Yang YF; Wang ZG 收藏  |  浏览/下载：9/0  |  提交时间：2010/10/29