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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Rapid photoluminescence quenching in GaInNAs quantum wells at low temperature 期刊论文 journal of luminescence, 2007, 卷号: 122 sp.iss.si, 期号: 0, 页码: 188-190 Sun, Z (Sun, Z.); Yang, XD (Yang, X. D.); Sun, BQ (Sun, B. Q.); Ji, Y (Ji, Y.); Zhang, SY (Zhang, S. Y.); Ni, HQ (Ni, H. Q.); Niu, ZC (Niu, Z. C.); Xu, ZY (Xu, Z. Y.) 收藏  |  浏览/下载：27/0  |  提交时间：2010/03/29 GaInNAs/GaAs   Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots 期刊论文 thin solid films, 2006, 卷号: 498, 期号: 1-2, 页码: 188-192 Kong LM; Cai JF; Wu ZY; Gong Z; Niu ZC; Feng ZC 收藏  |  浏览/下载：52/0  |  提交时间：2010/04/11 time-resolved photoluminescence  InAs self-assembled QDs  migration of carriers  1.3 MU-M  DEPENDENT RADIATIVE DECAY  THERMAL REDISTRIBUTION  EXCITONS  RECOMBINATION  RELAXATION  LIFETIMES  EMISSION  EPITAXY  LASERS   Effect of nonradiative recombination on carrier dynamics in GaInNAs/GaAs quantum wells 期刊论文 chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2566-2569 Sun Z (Sun Zheng); Wang BR (Wang Bao-Rui); Xu ZY (Xu Zhong-Ying); Sun BQ (Sun Bao-Quan); Ji Y (Ji Yang); Ni HQ (Ni Hai-Qiao); Niu ZC (Niu Zhi-Chuan) 收藏  |  浏览/下载：62/0  |  提交时间：2010/04/11 TIME-RESOLVED PHOTOLUMINESCENCE  MOLECULAR-BEAM EPITAXY  GAASN ALLOYS   Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots 会议论文 3rd asian conference on chemical vapor deposition, taipei, taiwan, nov 12-14, 2004 Kong LM; Cai JF; Wu ZY; Gong Z; Niu ZC; Feng ZC 收藏  |  浏览/下载：167/29  |  提交时间：2010/03/29 time-resolved photoluminescence   Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z 会议论文 conference on ultrafast phenomena in semiconductors and nanostructure materials x, san jose, ca, jan 23-25, 2006 Sun, Z (Sun, Z.); Xu, ZY (Xu, Z. Y.); Yang, XD (Yang, X. D.); Sun, BQ (Sun, B. Q.); Ji, Y (Ji, Y.); Zhang, SY (Zhang, S. Y.); Ni, HQ (Ni, H. Q.); Niu, ZC (Niu, Z. C.) 收藏  |  浏览/下载：182/36  |  提交时间：2010/03/29 GaInNAs/GaAs quantum wells  optical properties  nonradiative recombination effect  time-resolved photoluminescence  PL decay dynamics  PL thermal quenching  MOLECULAR-BEAM EPITAXY  GAASN ALLOYS  EXCITATION   A study of the growth and optical properties of AlInGaN alloys 期刊论文 acta physica sinica, 2003, 卷号: 52, 期号: 10, 页码: 2632-2637 Huang JS; Dong X; Lu XL; Xu ZY; Ge WK 收藏  |  浏览/下载：265/14  |  提交时间：2010/08/12 AlInGaN  MOCVD  localized exitons  quantum dots  TIME-RESOLVED PHOTOLUMINESCENCE  MULTIPLE-QUANTUM WELLS  LUMINESCENCE  RELAXATION  SILICON  GAN   Anomalous temperature dependence of photoluminescence from a-C : H film deposited by energetic hydrocarbon ion beam 期刊论文 solid state communications, 2002, 卷号: 121, 期号: 5, 页码: 287-290 Liao MY; Feng ZH; Yang SY; Chai CL; Liu ZK; Yang JL; Wang ZG 收藏  |  浏览/下载：84/8  |  提交时间：2010/08/12 luminescence  semiconductors  ion-beam deposition  OPTICAL-PROPERTIES  A-SI1-XCX-H FILMS  POROUS SILICON  NANOCRYSTALS  LUMINESCENCE  MECHANISM