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Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes 期刊论文
chinese physics b, 2008, 卷号: 17, 期号: 4, 页码: 1472-1474
Zhang, Y; Han, CL; Gao, JF; Zhu, ZP; Wang, BQ; Zeng, YP
收藏  |  浏览/下载:55/6  |  提交时间:2010/03/08
Dependence of current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes on quantum well widths 期刊论文
chinese physics b, 2008, 卷号: 17, 期号: 12, 页码: 4645-4647
作者:  Zhang Y;  Zhang Y
收藏  |  浏览/下载:266/32  |  提交时间:2010/03/08


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