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| Effect of built-in electric field in photovoltaic InAs quantum dot embedded GaAs solar cell 期刊论文
applied physics a-materials science & processing, 2011, 卷号: 103, 期号: 2, 页码: 335-341
作者: He JF ; Li MF
  收藏 | 浏览/下载：40/1 | 提交时间：2011/07/05
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| Tensile and compressive mechanical behavior of twinned silicon carbide nanowires 期刊论文
acta materialia, 2010, 卷号: 58, 期号: 6, 页码: 1963-1971
作者: Li JB
收藏 | 浏览/下载：63/1 | 提交时间：2010/04/22
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| Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers 会议论文
1st international symposium on point defect and stoichiometry, sendai, japan, mar 20-22, 2003
Leung BH; Fong WK; Surya C; Lu LW; Ge WK
收藏 | 浏览/下载：22/0 | 提交时间：2010/10/29
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| Theoretical analysis of characteristics of GaxIn1-xNyAs1-y/GaAs quantum well lasers with different intermediate layers 期刊论文
chinese physics letters, 2003, 卷号: 20, 期号: 8, 页码: 1261-1263
作者: Xu YQ
收藏 | 浏览/下载：39/0 | 提交时间：2010/08/12
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| Effect of different type intermediate layers on band structure and gain of Ga1-xInxNyAs1-y-GaAs quantum well lasers 期刊论文
ieee photonics technology letters, 2003, 卷号: 15, 期号: 10, 页码: 1336-1338
作者: Xu YQ
收藏 | 浏览/下载：395/1 | 提交时间：2010/08/12
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| Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers 期刊论文
ieee transactions on electron devices, 2002, 卷号: 49, 期号: 2, 页码: 314-318
Leung BH; Chan NH; Fong WK; Zhu CF; Ng SW; Lui HF; Tong KY; Surya C; Lu LW; Ge WK
收藏 | 浏览/下载：129/0 | 提交时间：2010/08/12
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| Micro-Raman study on hydrogenated protocrystalline silicon films 期刊论文
acta physica sinica, 2002, 卷号: 51, 期号: 8, 页码: 1811-1815
Zhang SB; Liao XB; An L; Yang FH; Kong GL; Wang YQ; Xu YY; Chen CY; Diao HW
收藏 | 浏览/下载：55/0 | 提交时间：2010/08/12
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| Observation of "ghost" islands and surfactant effect of surface gallium atoms during GaN growth by molecular beam epitaxy 期刊论文
physical review letters, 2000, 卷号: 85, 期号: 11, 页码: 2352-2355
Zheng LX; Xie MH; Seutter SM; Cheung SH; Tong SY
收藏 | 浏览/下载：44/0 | 提交时间：2010/08/12
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| Wurtzite GaN epitaxial growth on a Si(001) substrate using gamma-Al2O3 as an intermediate layer 期刊论文
applied physics letters, 1998, 卷号: 72, 期号: 1, 页码: 109-111
Wang LS; Liu XL; Zan YD; Wang J; Wang D; Lu DC; Wang ZG
收藏 | 浏览/下载：32/0 | 提交时间：2010/08/12
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| STRUCTURAL DEFECTS AND THEIR ELECTRICAL-ACTIVITY IN GERMANIUM IMPLANTED SILICON 期刊论文
nuclear instruments & methods in physics research section b-beam interactions with materials and atoms, 1993, 卷号: 74, 期号: 0, 页码: 127-130
ZHANG JP; FAN TW; GWILLIAM RM; HEMMENT PLF; WEN JQ; QIAN Y; EFEOGLU H; EVANS JH; PEAKER AR
收藏 | 浏览/下载：15/0 | 提交时间：2010/11/15 |
