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Near Full-Composition-Range High-Quality GaAs1−xSbx Nanowires Grown by Molecular-Beam Epitaxy 期刊论文
Nano Letters, 2017, 卷号: 17, 页码: 622−630
作者:  Lixia Li;  Dong Pan;  Yongzhou Xue;  Xiaolei Wang;  Miaoling Lin
收藏  |  浏览/下载：36/0  |  提交时间：2018/07/02
High quality above 3-mu m mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy 期刊论文
chinese physics b, 2014, 卷号: 23, 期号: 1, 页码: 017805
Xing, JL; Zhang, Y; Xu, YQ; Wang, GW; Wang, J; Xiang, W; Ni, HQ; Ren, ZW; He, ZH; Niu, ZC
收藏  |  浏览/下载：14/0  |  提交时间：2015/05/11
High quality above 3-μm mid-infrared InGaAsSb_AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy 期刊论文
Chin.Phys.B, 2013, 卷号: 23, 期号: 1, 页码: 017805
Xing Jun-Liang, Zhang Yu, Xu Ying-Qiang, Wang Guo-Wei, Wang Juan, Xiang Wei, Ni Hai-Qiao, Ren Zheng-Wei, He Zhen-Hong, Niu Zhi-Chuan
收藏  |  浏览/下载：15/0  |  提交时间：2014/03/26
High Quality Pseudomorphic In-0.24 GaAs/GaAs Multi-Quantum-Well and Large-Area Transmission Electro-Absorption Modulators 期刊论文
chinese physics letters, 2013, 卷号: 30, 期号: 4, 页码: 046102
Yang Xiao-Hong; Liu Shao-Qing; Ni Hai-Qiao; Li Mi-Feng; Li Liang; Han Qin; Niu Zhi-Chuan
收藏  |  浏览/下载：12/0  |  提交时间：2013/09/17
Molecular beam epitaxy growth of GaAs on an offcut Ge substrate 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 1, 页码: article no.18102
作者:  Li MF
收藏  |  浏览/下载：105/7  |  提交时间：2011/07/05
Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy 期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 4, 页码: 43004
He, Jifang; Shang, Xiangjun; Li, Mifeng; Zhu, Yan; Chang, Xiuying; Ni, Haiqiao; Xu, Yingqiang; Niu, Zhichuan
收藏  |  浏览/下载：73/0  |  提交时间：2012/06/14
Note: A time-resolved Kerr rotation system with a rotatable in-plane magnetic field 期刊论文
review of scientific instruments, 2010, 卷号: 81, 期号: 10, 页码: art. no. 106106
Qian XA (Qian Xuan); Gu XF (Gu Xiaofang); Ji Y (Ji Yang)
收藏  |  浏览/下载：21/0  |  提交时间：2010/12/05
DESIGN  
The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates 期刊论文
chinese physics b, 2009, 卷号: 18, 期号: 10, 页码: 4413-4417
Wu YX (Wu Yu-Xin); Zhu JJ (Zhu Jian-Jun); Zhao DG (Zhao De-Gang); Liu ZS (Liu Zong-Shun); Jiang DS (Jiang De-Sheng); Zhang SM (Zhang Shu-Ming); Wang YT (Wang Yu-Tian); Wang H (Wang Hui); Chen GF (Chen Gui-Feng); Yang H (Yang Hui)
收藏  |  浏览/下载：130/35  |  提交时间：2010/03/08
GaN  
Molecular Beam Epitaxy of GaSb on GaAs Substrates with AlSb Buffer Layers 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: art. no. 018101
作者:  Xu YQ;  Tang B
收藏  |  浏览/下载：221/40  |  提交时间：2010/03/08
1310 nm GaInNAs triple quantum well laser with 13 GHz modulation bandwidth 期刊论文
electronics letters, 2009, 卷号: 45, 期号: 7, 页码: 356-u23
Zhao H; Haglund A; Westburgh P; Wang SM; Gustavsson JS; Sadeghi M; Larsson A
收藏  |  浏览/下载：84/31  |  提交时间：2010/03/08

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