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科研机构
半导体研究所 [9]
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期刊论文 [8]
会议论文 [1]
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2011 [2]
2010 [1]
2007 [1]
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2002 [1]
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半导体物理 [9]
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Characteristics of undoped and Sb-doped ZnO thin films prepared in different atmospheres by pulsed laser deposition
期刊论文
physica status solidi a-applications and materials science, 2011, 卷号: 208, 期号: 4, 页码: 843-850
Zhu BL
;
Zhu SJ
;
Zhao XZ
;
Su FH
;
Li GH
;
Wu XG
;
Wu J
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  |  
浏览/下载:96/5
  |  
提交时间:2011/07/05
conductivity
doping
photoluminescence
pulsed laser deposition
ZnO
ZINC-OXIDE
ELECTRICAL-PROPERTIES
OPTICAL-PROPERTIES
OXYGEN-PRESSURE
PHOTOLUMINESCENCE
LUMINESCENCE
VIOLET
GROWTH
FABRICATION
DEPENDENCE
The explanation of InN bandgap discrepancy based on experiments and first-principle calculations
期刊论文
physics letters a, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155
作者:
Li JB
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浏览/下载:59/6
  |  
提交时间:2011/07/05
First principle calculation
Indium nitride
Band gap
Defect
INITIO MOLECULAR-DYNAMICS
AUGMENTED-WAVE METHOD
INDIUM NITRIDE
GAP
PSEUDOPOTENTIALS
SEMICONDUCTORS
IMPURITIES
ABSORPTION
DEFECTS
ALLOYS
Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs
期刊论文
physical review b, 2010, 卷号: 82, 期号: 19, 页码: art. no. 193204
Deng HX (Deng Hui-Xiong)
;
Li JB (Li Jingbo)
;
Li SS (Li Shu-Shen)
;
Peng HW (Peng Haowei)
;
Xia JB (Xia Jian-Bai)
;
Wang LW (Wang Lin-Wang)
;
Wei SH (Wei Su-Huai)
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  |  
浏览/下载:47/0
  |  
提交时间:2010/12/27
IMPURITIES
GAAS1-XNX
NITROGEN
GAINNAS
STATES
TRAPS
Electron irradiation induced defects in high temperature annealed InP single crystal
期刊论文
acta physica sinica, 2007, 卷号: 56, 期号: 3, 页码: 1603-1607
Wang B (Wang Bo)
;
Zhao YW (Zhao You-Wen)
;
Dong ZY (Dong Zhi-Yuan)
;
Deng AH (Deng Ai-Hong)
;
Miao SS (Miao Shan-Shan)
;
Yang J (Yang Jun)
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  |  
浏览/下载:27/0
  |  
提交时间:2010/03/29
InP
Improvement of the electrical property of semi-insulating InP by suppression of compensation defects
会议论文
17th international conference on indium phosphide and related materials, glasgow, scotland, may 08-12, 2005
Zhao, YW
;
Dong, ZY
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  |  
浏览/下载:220/68
  |  
提交时间:2010/03/29
ENCAPSULATED CZOCHRALSKI INP
SEMICONDUCTOR COMPOUND-CRYSTALS
STIMULATED CURRENT SPECTROSCOPY
CURRENT TRANSIENT SPECTROSCOPY
DEEP-LEVEL DEFECTS
ANNEALING AMBIENT
POINT-DEFECTS
FE
PHOSPHIDE
DONORS
Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence
期刊论文
applied physics letters, 2002, 卷号: 80, 期号: 21, 页码: 3934-3936
Ling CC
;
Mui WK
;
Lam CH
;
Beling CD
;
Fung S
;
Lui MK
;
Cheah KW
;
Li KF
;
Zhao YW
;
Gong M
收藏
  |  
浏览/下载:87/9
  |  
提交时间:2010/08/12
ANTIMONIDE
Photoluminescence of ZnO : Tb nanoparticles
期刊论文
acta physica sinica, 2000, 卷号: 49, 期号: 11, 页码: 2307-2309
作者:
Liu SM
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  |  
浏览/下载:48/0
  |  
提交时间:2010/08/12
photoluminescence
doping
nanocrystals
NANOCRYSTALS
CENTERS
Study of microstructure of high stability hydrogenated amorphous silicon films by Raman scattering and infrared absorption spectroscopy
期刊论文
applied physics letters, 1998, 卷号: 73, 期号: 3, 页码: 336-338
Sheng SR
;
Liao XB
;
Kong GL
;
Han HX
收藏
  |  
浏览/下载:49/0
  |  
提交时间:2010/08/12
A-SI-H
CRYSTALLINE SILICON
DEPOSITION
SPECTRA
QUALITY
Compensation ratio-dependent concentration of a VInH4 complex in n-type liquid encapsulated Czochralski InP
期刊论文
applied physics letters, 1998, 卷号: 73, 期号: 9, 页码: 1275-1277
Fung S
;
Zhao YW
;
Beling CD
;
Xu XL
;
Gong M
;
Sun NF
;
Sun TN
;
Chen XD
;
Zhang RG
;
Liu SL
;
Yang GY
;
Qian JJ
;
Sun MF
;
Liu XL
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2010/08/12
SEMICONDUCTORS
HYDROGEN
DEFECTS
MECHANISM
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