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CORC

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High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth 期刊论文
chinese physics b, 2008, 卷号: 17, 期号: 1, 页码: 323-327
She-Song, H; Zhi-Chuan, N; Feng, Z; Hai-Qiao, N; Huan, Z; Dong-Hai, W; Zheng, S
收藏  |  浏览/下载：42/3  |  提交时间：2010/03/08
Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3-1.55 mu m grown by molecular beam epitaxy 期刊论文
journal of crystal growth, 2007, 卷号: 301, 期号: 0, 页码: 125-128
Ni, HQ (Ni, H. Q.); Niu, ZC (Niu, Z. C.); Fang, ZD (Fang, Z. D.); Huang, SS (Huang, S. S.); Zhang, SY (Zhang, S. Y.); Wu, DH (Wu, D. H.); Shun, Z (Shun, Z.); Han, Q (Han, Q.); Wu, RH (Wu, R. H.)
收藏  |  浏览/下载：34/0  |  提交时间：2010/03/29
Application of rapid thermal annealing on 1.3-1.55 mu m GaInNAs(Sb) lasers grown by molecular beam epitaxy 期刊论文
journal of crystal growth, 2007, 卷号: 301, 期号: 0, 页码: 979-983
Zhao, H (Zhao, H.); Xu, YQ (Xu, Y. Q.); Ni, HQ (Ni, H. Q.); Zhang, SY (Zhang, S. Y.); Han, Q (Han, Q.); Du, Y (Du, Y.); Yang, XH (Yang, X. H.); Wu, RH (Wu, R. H.); Niu, ZC (Niu, Z. C.)
收藏  |  浏览/下载：56/0  |  提交时间：2010/03/29
Room temperature continuous wave operation of 1.33-micron InAs/GaAs quantum dot laser with high output power 期刊论文
chinese optics letters, 2006, 卷号: 4, 期号: 7, 页码: 413-415
作者:  Xiaohong Yang;  Qin Han;  Zhichuan Niu;  Yingqiang Xu;  Hongling Peng
收藏  |  浏览/下载：15/0  |  提交时间：2010/11/23
Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy 会议论文
3rd international conference on materials for advanced technologies/9th international conference on advanced materials, singapore, singapore, jul 03-08, 2005
Jiang, DS; Qu, YH; Ni, HQ; Wu, DH; Xu, YQ; Niu, ZC
收藏  |  浏览/下载：110/24  |  提交时间：2010/03/29
1.3μm InGaAs/InAs/GaAs Self-Assembled Quantum Dot Laser Diode Grown by Molecular Beam Epitaxy 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 3, 页码: 482-488
作者:  Wu Donghai;  Han Qin;  Peng Hongling;  Niu Zhichuan
收藏  |  浏览/下载：16/0  |  提交时间：2010/11/23
Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy 期刊论文
journal of crystal growth, 2006, 卷号: 288, 期号: 1, 页码: 40529
作者:  Wu DH;  Niu ZC;  Jiang DS;  Xu YQ
收藏  |  浏览/下载：81/0  |  提交时间：2010/04/11
Post-growth and in situ annealing on GaInNAs(Sb) and their application in 1.55 mu m lasers 期刊论文
semiconductor science and technology, 2006, 卷号: 21, 期号: 3, 页码: 279-282
作者:  Xu YQ;  Yang XH
收藏  |  浏览/下载：76/0  |  提交时间：2010/04/11
Material Growth and Device Fabrication of GaAs Based 1.3μm GaInNAs Quantum Well Laser Diodes 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 9, 页码: 1860-1864
作者:  Xu Yingqiang;  Yang Xiaohong;  Xu Yingqiang;  Han Qin;  Niu Zhichuan
收藏  |  浏览/下载：33/0  |  提交时间：2010/11/23
GaAs-based room-temperature continuous-wave 1.59 mu m GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy 期刊论文
applied physics letters, 2005, 卷号: 87, 期号: 23, 页码: art.no.231121
Niu, ZC; Zhang, SY; Ni, HQ; Wu, DH; Zhao, H; Peng, HL; Xu, YQ; Li, SY; He, ZH; Ren, ZW; Han, Q; Yang, XH; Du, Y; Wu, RH
收藏  |  浏览/下载：130/37  |  提交时间：2010/03/17

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