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科研机构
半导体研究所 [19]
内容类型
期刊论文 [19]
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2011 [1]
2010 [1]
2009 [2]
2008 [3]
2007 [3]
2006 [2]
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半导体物理 [19]
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The explanation of InN bandgap discrepancy based on experiments and first-principle calculations
期刊论文
physics letters a, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155
作者:
Li JB
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浏览/下载:59/6
  |  
提交时间:2011/07/05
First principle calculation
Indium nitride
Band gap
Defect
INITIO MOLECULAR-DYNAMICS
AUGMENTED-WAVE METHOD
INDIUM NITRIDE
GAP
PSEUDOPOTENTIALS
SEMICONDUCTORS
IMPURITIES
ABSORPTION
DEFECTS
ALLOYS
Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs
期刊论文
physical review b, 2010, 卷号: 82, 期号: 19, 页码: art. no. 193204
Deng HX (Deng Hui-Xiong)
;
Li JB (Li Jingbo)
;
Li SS (Li Shu-Shen)
;
Peng HW (Peng Haowei)
;
Xia JB (Xia Jian-Bai)
;
Wang LW (Wang Lin-Wang)
;
Wei SH (Wei Su-Huai)
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  |  
浏览/下载:47/0
  |  
提交时间:2010/12/27
IMPURITIES
GAAS1-XNX
NITROGEN
GAINNAS
STATES
TRAPS
Design of shallow acceptors in ZnO through compensated donor-acceptor complexes: A density functional calculation
期刊论文
physical review b, 2009, 卷号: 80, 期号: 15, 页码: art.no.153201
Gai YQ (Gai, Yanqin)
;
Li JB (Li, Jingbo)
;
Li SS (Li, Shu-Shen)
;
Xia JB (Xia, Jian-Bai)
;
Yan YF (Yan, Yanfa)
;
Wei SH (Wei, Su-Huai)
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  |  
浏览/下载:130/34
  |  
提交时间:2010/03/08
INITIO MOLECULAR-DYNAMICS
The bipolar doping of ZnS via native defects and external dopants
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 11, 页码: art. no. 113704
作者:
Li JB
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浏览/下载:131/30
  |  
提交时间:2010/03/08
AUGMENTED-WAVE METHOD
P-TYPE ZNO
POINT-DEFECTS
II-VI
NITROGEN
SEMICONDUCTORS
1ST-PRINCIPLES
COMPENSATION
ENHANCEMENT
Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles
期刊论文
physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 195206
Shi LJ
;
Zhu LF
;
Zhao YH
;
Liu BG
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  |  
浏览/下载:217/56
  |  
提交时间:2010/03/08
ab initio calculations
aluminium compounds
annealing
band structure
chromium
Curie temperature
density functional theory
exchange interactions (electron)
ferromagnetic materials
III-V semiconductors
semimagnetic semiconductors
total energy
vacancies (crystal)
Mg acceptor energy levels in AlxInyGa1-x-yN quaternary alloys: An approach to overcome the p-type doping bottleneck in nitrides
期刊论文
physical review b, 2008, 卷号: 77, 期号: 11, 页码: art. no. 113202
Wang, F
;
Li, JB
;
Li, SS
;
Xia, JB
;
Wei, SH
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浏览/下载:74/0
  |  
提交时间:2010/03/08
SPECIAL QUASIRANDOM STRUCTURES
AUGMENTED-WAVE METHOD
BASIS-SET
SEMICONDUCTORS
LATTICE
First-principle study of extrinsic defects in CuScO2 and CuYO2
期刊论文
physics letters a, 2008, 卷号: 372, 期号: 21, 页码: 3759-3762
Fang, ZJ
;
Shi, LJ
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浏览/下载:61/7
  |  
提交时间:2010/03/08
CuMO2
doping
VASP
Influence of N doping on the Rashba coefficient, semiconductor-metal transition, and electron effective mass in InSb1-xNx nanowires: Ten-band k center dot p model
期刊论文
physical review b, 2007, 卷号: 75, 期号: 20, 页码: art.no.205331
Zhang XW
;
Fan WJ
;
Li SS
;
Xia JB
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  |  
浏览/下载:26/0
  |  
提交时间:2010/03/29
INNXSB1-X ALLOYS
Thermally induced Fe atom transition from substitutional to interstitial sites in InP and its influence on material property
期刊论文
acta physica sinica, 2007, 卷号: 56, 期号: 9, 页码: 5536-5541
Zhao, YW (Zhao You-Wen)
;
Miao, SS (Miao Shan-Shan)
;
Dong, ZY (Dong Zhi-Yuan)
;
Lue, XH (Lue Xiao-Hong)
;
Deng, AH (Deng Ai-Hong)
;
Yang, J (Yang Jun)
;
Wang, B (Wang Bo)
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  |  
浏览/下载:35/0
  |  
提交时间:2010/03/29
indium phosphide
Electric field tunable electron g factor and high asymmetrical Stark effect in InAs1-xNx quantum dots
期刊论文
applied physics letters, 2007, 卷号: 90, 期号: 15, 页码: art.no.153103
Zhang, XW (Zhang, X. W.)
;
Fan, WJ (Fan, W. J.)
;
Li, SS (Li, S. S.)
;
Xia, JB (Xia, J. B.)
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  |  
浏览/下载:121/0
  |  
提交时间:2010/03/29
OPTICAL-PROPERTIES
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