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Defects in gallium nitride nanowires: First principles calculations 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 4, 页码: art. no. 044305
Wang ZG (Wang Zhiguo); Li JB (Li Jingbo); Gao F (Gao Fei); Weber WJ (Weber William J.)
收藏  |  浏览/下载:105/1  |  提交时间:2010/10/11
Controlling electronic structures by irradiation in single-walled SiC nanotubes: a first-principles molecular dynamics study 期刊论文
nanotechnology, 2009, 卷号: 20, 期号: 7, 页码: art. no. 075708
作者:  Li JB
收藏  |  浏览/下载:164/21  |  提交时间:2010/03/08
Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles 期刊论文
physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 195206
Shi LJ; Zhu LF; Zhao YH; Liu BG
收藏  |  浏览/下载:217/56  |  提交时间:2010/03/08
Atomic configurations of dislocation core and twin boundaries in 3C-SiC studied by high-resolution electron microscopy 期刊论文
physical review b, 2007, 卷号: 75, 期号: 18, 页码: art.no.184103
Tang CY; Li FH; Wang R; Zou J; Zheng XH; Liang JW
收藏  |  浏览/下载:50/0  |  提交时间:2010/03/29
Microstructure of a-SiOx : H 期刊论文
science in china series a-mathematics physics astronomy, 2002, 卷号: 45, 期号: 10, 页码: 1320-1328
Wang YQ; Liao XB; Diao HW; Cheng WC; Li GH; Chen CY; Zhang SB; Xu YY; Chen WD; Kong GL
收藏  |  浏览/下载:43/0  |  提交时间:2010/08/12
Study of microstructure of high stability hydrogenated amorphous silicon films by Raman scattering and infrared absorption spectroscopy 期刊论文
applied physics letters, 1998, 卷号: 73, 期号: 3, 页码: 336-338
Sheng SR; Liao XB; Kong GL; Han HX
收藏  |  浏览/下载:49/0  |  提交时间:2010/08/12
INTERFACIAL REACTIONS IN THE CO/SI/GAAS AND SI/CO/GAAS SYSTEMS 期刊论文
journal of vacuum science & technology a-vacuum surfaces and films, 1992, 卷号: 10, 期号: 4, 页码: 1020-1028
HSU CC; JIN GL; HO J; CHEN WD
收藏  |  浏览/下载:9/0  |  提交时间:2010/11/15
THIN-FILMS  GAAS  CO  SI  
ELECTRONIC AND MAGNETIC-STRUCTURE OF THE TERNARY COMPOUND ND2FE17N 期刊论文
physical review b, 1992, 卷号: 46, 期号: 21, 页码: 13874-13880
GU ZQ; LAI WY; ZHONG XF; CHING WY
收藏  |  浏览/下载:11/0  |  提交时间:2010/11/15


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