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| Two opposite gradients of hole density in as-grown and annealed (Ga,Mn)As layers 期刊论文 journal of magnetism and magnetic materials, 2007, 卷号: 308, 期号: 2, 页码: 313-317 作者: Tan PH; Gan HD 收藏  |  浏览/下载:29/0  |  提交时间:2010/04/11
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| Dependence of intrinsic defects in ZnO films on oxygen fraction studied by positron annihilation 期刊论文 chinese physics letters, 2006, 卷号: 23, 期号: 2, 页码: 489-492 Peng CX; Weng HM; Yang XJ; Ye BJ; Cheng B; Zhou XY; Han RD 收藏  |  浏览/下载:235/9  |  提交时间:2010/04/11
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| As-doped p-type ZnO films by sputtering and thermal diffusion process 期刊论文 journal of applied physics, 2006, 卷号: 100, 期号: 4, 页码: art.no.043704 Wang P (Wang Peng); Chen NF (Chen Nuofu); Yin ZG (Yin Zhigang); Yang F (Yang Fei); Peng CT (Peng Changtao); Dai RX (Dai Ruixuan); Bai YM (Bai Yiming) 收藏  |  浏览/下载:38/0  |  提交时间:2010/04/11
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| Mechanisms of the sidewall facet evolution in lateral epitaxial overgrowth of GaN by MOCVD 期刊论文 journal of physics d-applied physics, 2002, 卷号: 35, 期号: 21, 页码: 2731-2734 作者: Zhao DG 收藏  |  浏览/下载:40/0  |  提交时间:2010/08/12
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| Growth and photoluminescence of epitaxial CeO2 film on Si (111) substrate 期刊论文 chinese physics letters, 2001, 卷号: 18, 期号: 3, 页码: 443-444 Gao F; Li GH; Zhang JH; Qin FG; Yao ZY; Liu ZK; Wang ZG; Lin LY 收藏  |  浏览/下载:105/9  |  提交时间:2010/08/12
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| Longitudinal optic phonon-plasmon coupling in delta-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates 期刊论文 applied physics letters, 2001, 卷号: 79, 期号: 9, 页码: 1375-1377 Jiang CP; Huang ZM; Li ZF; Yu J; Guo SL; Lu W; Chu JH; Cui LJ; Zeng YP; Zhu ZP; Wang BQ 收藏  |  浏览/下载:76/2  |  提交时间:2010/08/12
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| Surface acoustic wave velocity and electromechanical coupling coefficient of GaN grown on (0001) sapphire by metal-organic vapour phase epitaxy 期刊论文 chinese physics letters, 2001, 卷号: 18, 期号: 10, 页码: 1418-1419 作者: Han PD 收藏  |  浏览/下载:84/7  |  提交时间:2010/08/12
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| Gap states of hydrogenated amorphous silicon near and above the threshold of microcrystallinity with subtle boron compensation 期刊论文 applied physics letters, 2001, 卷号: 78, 期号: 17, 页码: 2509-2511 Sheng SR; Liao XB; Kong GL 收藏  |  浏览/下载:103/17  |  提交时间:2010/08/12
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| Wurtzite GaN epitaxial growth on a Si(001) substrate using gamma-Al2O3 as an intermediate layer 期刊论文 applied physics letters, 1998, 卷号: 72, 期号: 1, 页码: 109-111 Wang LS; Liu XL; Zan YD; Wang J; Wang D; Lu DC; Wang ZG 收藏  |  浏览/下载:32/0  |  提交时间:2010/08/12
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| SELF-CONSISTENT TREATMENT OF 3-DIMENSIONAL - 2-DIMENSIONAL AND 2-DIMENSIONAL - 2-DIMENSIONAL RESONANT-TUNNELING IN DOUBLE-BARRIER STRUCTURES 期刊论文 physical review b, 1993, 卷号: 48, 期号: 7, 页码: 4575-4585 ZHU BF; HUANG K 收藏  |  浏览/下载:17/0  |  提交时间:2010/11/15
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